MT46V128M4P-5B:J

The MT46V128M4P-5B:J is a 512 Mbit double-data-rate (DDR) SDRAM device organized as 128M × 4 with a parallel memory interface. It implements an internal pipelined DDR architecture that provides two data transfers per clock cycle and supports a 200 MHz clock rate (speed grade -5B).

Designed for commercial-temperature applications (0°C to +70°C), this device delivers source-synchronous data capture with bidirectional DQS, differential clock inputs, and 2.5 V I/O compatibility for systems requiring parallel DDR memory in compact 66‑TSSOP packaging.

Key Features

• Core architecture  Internal, pipelined double-data-rate (DDR) architecture enabling two data accesses per clock cycle; includes a DLL to align DQ and DQS transitions with CK.
• Memory size & organization  512 Mbit capacity, organized as 128M × 4 with four internal banks (32M × 4 × 4 banks configuration).
• Speed & timing  Supports a 200 MHz clock rate (speed grade -5B) with an access time of 700 ps and programmable burst lengths of 2, 4, or 8. Write cycle time (word page) is 15 ns.
• Interface & signaling  Parallel memory interface with bidirectional data strobe (DQS), DQS edge-aligned for READs and center-aligned for WRITEs, plus differential clock inputs (CK/CK#).
• Power  VDD and VDDQ supply window of 2.5 V ±0.2 V (alternate 2.6 V ±0.1 V DDR400 option); 2.5 V I/O (SSTL_2 compatible) for standard signaling levels.
• Refresh & reliability features  Auto refresh with 8K refresh cycles (64 ms for commercial timing) and optional self refresh per device option set in the datasheet.
• Package & mounting  66‑TSSOP (0.400", 10.16 mm width) plastic package; standard parallel mounting for board-level integration.
• Operating range  Commercial temperature rating: 0°C to +70°C (TA).

Unique Advantages

• High data throughput: DDR architecture with two data transfers per clock and a 200 MHz clock rate enables elevated transfer rates within the specified speed grade.
• Source-synchronous capture: Bidirectional DQS and DLL alignment improve read/write timing margins for source-synchronous data capture.
• Flexible burst control: Programmable burst lengths (2, 4, 8) allow designers to match transfer granularity to system memory access patterns.
• SSTL_2 compatible I/O: 2.5 V I/O levels align with common SSTL_2 signaling for straightforward interface integration.
• Compact board footprint: 66‑TSSOP package provides a narrower profile for space-constrained PCBs while maintaining parallel interface accessibility.
• Commercial temperature rating: Rated for 0°C to +70°C operating ambient for applications targeting commercial environments.

Why Choose MT46V128M4P-5B:J?

The MT46V128M4P-5B:J positions as a practical DDR SDRAM option for designs that require a 512 Mbit parallel memory device with source-synchronous signaling, programmable burst lengths, and a compact 66‑TSSOP footprint. Its 2.5 V I/O compatibility and DLL-supported timing alignment make it suitable for systems that demand predictable read/write timing and integration with SSTL_2-level interfaces.

Engineers and procurement teams building commercial-temperature embedded systems or legacy parallel-interface platforms can rely on the documented timing grades, refresh behavior, and package specification to evaluate fit and lifecycle planning.

Request a quote or submit a procurement inquiry to evaluate MT46V128M4P-5B:J for your next design or production run.