MT46V128M4FN-5B:D TR
| Part Description |
IC DRAM 512MBIT PARALLEL 60FBGA |
|---|---|
| Quantity | 1,207 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 60-FBGA (10x12.5) | Memory Format | DRAM | Technology | SDRAM - DDR | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Mbit | Access Time | 700 ps | Grade | Commercial | ||
| Clock Frequency | 200 MHz | Voltage | 2.5V ~ 2.7V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | 15 ns | Packaging | 60-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 128M x 4 | ||
| Moisture Sensitivity Level | 5 (48 Hours) | RoHS Compliance | RoHS non-compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | EAR99 | HTS Code | 8542.32.0024 |
Overview of MT46V128M4FN-5B:D TR – IC DRAM 512Mbit Parallel 60‑FBGA
The MT46V128M4FN-5B:D TR is a 512 Mbit DDR SDRAM organized as 128M × 4 with four internal banks and a parallel memory interface. It implements an internal, pipelined double-data-rate architecture with source-synchronous data capture and a DLL for alignment, delivering two data accesses per clock cycle for systems requiring DDR memory.
Packaged in a 60-ball FBGA (10 mm × 12.5 mm) and specified for commercial temperature operation (0°C to 70°C), this device targets system memory applications that require standard 2.5 V DDR signaling and support for established PC DDR speed grades.
Key Features
- Core architecture Internal pipelined DDR design providing two data transfers per clock cycle, four internal banks for concurrent operation, and an on-die DLL to align DQ/DQS with CK.
- Memory organization & capacity 512 Mbit total capacity organized as 128M × 4 (32 Meg × 4 × 4 banks), supporting programmable burst lengths of 2, 4, or 8.
- Performance & timing Supported clock rate up to 200 MHz (speed grade -5B), access time 700 ps, data‑out window and skew characteristics defined for reliable timing; typical write cycle time (word page) 15 ns.
- Interface & signaling Parallel DDR interface with differential clock inputs (CK/CK#), bidirectional data strobe (DQS) transmitted/received with data, data mask (DM) support, and SSTL_2-compatible 2.5 V I/O.
- Power VDD/VDDQ operation in the 2.5 V ± tolerance range (product supply specified 2.5 V – 2.7 V), supporting standard DDR voltage rails.
- Refresh & retention Auto-refresh with an 8K refresh count (64 ms / 8192-cycle for commercial devices) and options noted for self-refresh in device configurations.
- Package & temperature 60-ball TFBGA / FBGA package (10 mm × 12.5 mm) with commercial ambient operating range 0°C to 70°C.
- Volatile memory type DRAM memory that requires periodic refresh; organized and specified for standard DDR system integration.
Typical Applications
- PC memory modules — Speed-grade compatibility entries (PC3200, PC2700, PC2100) in the device documentation make it suitable for use in DDR memory modules and related system memory implementations.
- Computing and embedded systems — Parallel DDR SDRAM for subsystems that require standard DDR signaling, source-synchronous capture, and up to 200 MHz clock operation.
- Consumer and commercial electronics — Systems requiring a commercial-temperature DDR SDRAM in a compact 60‑ball FBGA package with defined refresh and timing characteristics.
Unique Advantages
- Double-data-rate throughput: Two data accesses per clock cycle and source-synchronous DQS enable higher effective bandwidth compared with single-data-rate devices.
- Defined timing margins: Speed-grade timing and data‑out windows (including DQS-DQ skew) are specified to support reliable interface timing at rated frequencies.
- Standard 2.5 V signaling: VDD/VDDQ operation and SSTL_2-compatible I/O simplify integration with existing DDR system interfaces.
- Compact FBGA package: 60-ball (10 mm × 12.5 mm) FBGA offers a small footprint for space-constrained board designs.
- Refresh and power options: Auto-refresh with 8K refresh count and documented self-refresh options (per device configuration) support system-level power management strategies.
Why Choose IC DRAM 512MBIT PARALLEL 60FBGA?
The MT46V128M4FN-5B:D TR positions as a commercial-temperature DDR SDRAM solution that combines a 512 Mbit density, 128M × 4 organization, and established DDR feature set (DQS, DLL, differential clocking) for parallel memory subsystems. Its defined timing grades and 2.5 V signaling make it suitable for designs targeting PC-compatible DDR performance levels and other systems requiring standard DDR memory integration.
Engineers specifying this device benefit from compact 60‑ball FBGA packaging, explicit timing and refresh specifications, and a device architecture intended for straightforward integration into DDR memory subsystems where commercial-temperature operation and standard DDR electrical interfaces are required.
For pricing, availability, or to request a quotation for the MT46V128M4FN-5B:D TR, please submit a quote request or contact sales through your usual procurement channels.