MT46V128M4FN-5B:D TR

IC DRAM 512MBIT PARALLEL 60FBGA
Part Description

IC DRAM 512MBIT PARALLEL 60FBGA

Quantity 1,207 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package60-FBGA (10x12.5)Memory FormatDRAMTechnologySDRAM - DDR
Memory Size512 MbitAccess Time700 psGradeCommercial
Clock Frequency200 MHzVoltage2.5V ~ 2.7VMemory TypeVolatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word Page15 nsPackaging60-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization128M x 4
Moisture Sensitivity Level5 (48 Hours)RoHS ComplianceRoHS non-compliantREACH ComplianceREACH Unaffected
QualificationN/AECCNEAR99HTS Code8542.32.0024

Overview of MT46V128M4FN-5B:D TR – IC DRAM 512Mbit Parallel 60‑FBGA

The MT46V128M4FN-5B:D TR is a 512 Mbit DDR SDRAM organized as 128M × 4 with four internal banks and a parallel memory interface. It implements an internal, pipelined double-data-rate architecture with source-synchronous data capture and a DLL for alignment, delivering two data accesses per clock cycle for systems requiring DDR memory.

Packaged in a 60-ball FBGA (10 mm × 12.5 mm) and specified for commercial temperature operation (0°C to 70°C), this device targets system memory applications that require standard 2.5 V DDR signaling and support for established PC DDR speed grades.

Key Features

  • Core architecture Internal pipelined DDR design providing two data transfers per clock cycle, four internal banks for concurrent operation, and an on-die DLL to align DQ/DQS with CK.
  • Memory organization & capacity 512 Mbit total capacity organized as 128M × 4 (32 Meg × 4 × 4 banks), supporting programmable burst lengths of 2, 4, or 8.
  • Performance & timing Supported clock rate up to 200 MHz (speed grade -5B), access time 700 ps, data‑out window and skew characteristics defined for reliable timing; typical write cycle time (word page) 15 ns.
  • Interface & signaling Parallel DDR interface with differential clock inputs (CK/CK#), bidirectional data strobe (DQS) transmitted/received with data, data mask (DM) support, and SSTL_2-compatible 2.5 V I/O.
  • Power VDD/VDDQ operation in the 2.5 V ± tolerance range (product supply specified 2.5 V – 2.7 V), supporting standard DDR voltage rails.
  • Refresh & retention Auto-refresh with an 8K refresh count (64 ms / 8192-cycle for commercial devices) and options noted for self-refresh in device configurations.
  • Package & temperature 60-ball TFBGA / FBGA package (10 mm × 12.5 mm) with commercial ambient operating range 0°C to 70°C.
  • Volatile memory type DRAM memory that requires periodic refresh; organized and specified for standard DDR system integration.

Typical Applications

  • PC memory modules — Speed-grade compatibility entries (PC3200, PC2700, PC2100) in the device documentation make it suitable for use in DDR memory modules and related system memory implementations.
  • Computing and embedded systems — Parallel DDR SDRAM for subsystems that require standard DDR signaling, source-synchronous capture, and up to 200 MHz clock operation.
  • Consumer and commercial electronics — Systems requiring a commercial-temperature DDR SDRAM in a compact 60‑ball FBGA package with defined refresh and timing characteristics.

Unique Advantages

  • Double-data-rate throughput: Two data accesses per clock cycle and source-synchronous DQS enable higher effective bandwidth compared with single-data-rate devices.
  • Defined timing margins: Speed-grade timing and data‑out windows (including DQS-DQ skew) are specified to support reliable interface timing at rated frequencies.
  • Standard 2.5 V signaling: VDD/VDDQ operation and SSTL_2-compatible I/O simplify integration with existing DDR system interfaces.
  • Compact FBGA package: 60-ball (10 mm × 12.5 mm) FBGA offers a small footprint for space-constrained board designs.
  • Refresh and power options: Auto-refresh with 8K refresh count and documented self-refresh options (per device configuration) support system-level power management strategies.

Why Choose IC DRAM 512MBIT PARALLEL 60FBGA?

The MT46V128M4FN-5B:D TR positions as a commercial-temperature DDR SDRAM solution that combines a 512 Mbit density, 128M × 4 organization, and established DDR feature set (DQS, DLL, differential clocking) for parallel memory subsystems. Its defined timing grades and 2.5 V signaling make it suitable for designs targeting PC-compatible DDR performance levels and other systems requiring standard DDR memory integration.

Engineers specifying this device benefit from compact 60‑ball FBGA packaging, explicit timing and refresh specifications, and a device architecture intended for straightforward integration into DDR memory subsystems where commercial-temperature operation and standard DDR electrical interfaces are required.

For pricing, availability, or to request a quotation for the MT46V128M4FN-5B:D TR, please submit a quote request or contact sales through your usual procurement channels.

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