MT40A8G4NEA-062E:F TR

IC DRAM 32GBIT PAR 78FBGA
Part Description

IC DRAM 32GBIT PAR 78FBGA

Quantity 357 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusActive
Manufacturer Standard Lead Time6 Weeks
Datasheet

Specifications & Environmental

Device Package78-FBGA (7.5x11)Memory FormatDRAMTechnologySDRAM - DDR4
Memory Size32 GbitAccess Time13.75 nsGradeExtended / Automotive-like
Clock Frequency1.6 GHzVoltage1.14V ~ 1.26VMemory TypeVolatile
Operating Temperature0°C ~ 95°C (TC)Write Cycle Time Word PageN/APackaging78-TFBGA
Mounting MethodVolatileMemory InterfaceParallelMemory Organization8G x 4
Moisture Sensitivity LevelN/ARoHS ComplianceUnknownREACH ComplianceREACH Unaffected
QualificationN/AECCNN/AHTS CodeN/A

Overview of MT40A8G4NEA-062E:F TR – IC DRAM 32GBIT PAR 78FBGA

The MT40A8G4NEA-062E:F TR is a 32 Gbit TwinDie™ DDR4 SDRAM device implemented as an 8G×4 memory organization with a parallel interface. It combines two Micron 16Gb DDR4 dies into a dual-rank solution supporting JEDEC-standard ball-out in a 78-ball FBGA package (7.5 mm × 11 mm × 1.2 mm).

Designed for high-density DDR4 memory subsystems, this part provides a 3200 MT/s speed grade (‑062E), a 1.14–1.26 V supply range for VDD/VDDQ, and a commercial operating temperature range of 0°C to 95°C, delivering specified timing and refresh behavior for systems requiring robust parallel DRAM capacity.

Key Features

  • Memory Architecture  TwinDie™ construction combining two 16Gb DDR4 dies into a single 32Gb (8G×4) device with two ranks (dual CS#, ODT, and CKE balls).
  • Density & Organization  32 Gbit total capacity organized as 8G×4 with 16 banks per die and 2 ranks for expanded address space and rank-based operation.
  • Performance / Timing  Speed grade -062E targets 3200 MT/s with CL-tRCD-tRP = 22-22-22 and key timing parameter tAA = 13.75 ns (access time 13.75 ns).
  • Clock & I/O  1.6 GHz clock frequency with 1.2 V VDD/VDDQ nominal operation and 1.14–1.26 V specified supply range; VDDQ-terminated I/O per datasheet notes.
  • Banking & Concurrency  Each rank includes 4 groups of 4 internal banks to support concurrent operation across bank groups.
  • Package & Mounting  78-ball FBGA (7.5 mm × 11 mm × 1.2 mm) low-profile package; supplier device package listed as 78-FBGA (7.5×11).
  • Temperature & Refresh  Commercial operating temperature 0°C to 95°C with defined refresh cycles: 8192 refresh cycles per 64 ms for 0°C–85°C and per 32 ms for 85°C–95°C.
  • JEDEC Compliance  JEDEC-standard ball-out and timing references correlate to Micron’s 16Gb DDR4 SDRAM documentation for detailed electrical and timing specifications.

Typical Applications

  • High-density DDR4 memory subsystems  Used where a 32 Gbit parallel DDR4 memory element is required for board-level memory implementations.
  • Multi-rank memory designs  Dual-rank layout supports systems that leverage multiple ranks for increased memory capacity and address flexibility.
  • Compact module and board designs  Low-profile 78-ball FBGA (7.5×11) packaging supports space-constrained PCBs requiring high-capacity DRAM.

Unique Advantages

  • TwinDie two-rank integration:  Combines two 16Gb dies to deliver 32Gb in a single package with dual CS#, ODT, and CKE for rank-enabled designs.
  • High-speed DDR4 timing:  -062E speed grade at 3200 MT/s with CL = 22 and tAA = 13.75 ns provides defined high-data-rate operation.
  • Bank-group concurrency:  Four groups of four banks per rank permit concurrent operation across bank groups for improved internal access parallelism.
  • Nominal 1.2 V operation:  VDD = VDDQ = 1.2 V with an allowed range of 1.14–1.26 V and VDDQ-terminated I/O for standard DDR4 electrical operation.
  • Compact FBGA package:  78-ball FBGA (7.5 mm × 11 mm × 1.2 mm) offers a low-profile footprint for high-density board layouts.
  • Commercial temperature qualification:  Specified operating range of 0°C to 95°C with corresponding refresh cycle requirements documented for system design.

Why Choose MT40A8G4NEA-062E:F TR?

The MT40A8G4NEA-062E:F TR positions itself as a high-density DDR4 SDRAM component for designs that require 32 Gbit capacity in an x4 parallel interface with dual-rank capability. Its TwinDie architecture, 3200 MT/s speed grade, and defined timing parameters (CL/tRCD/tRP = 22-22-22; tAA = 13.75 ns) make it suitable for systems that demand specified DDR4 performance and rank-based memory organization.

This device is appropriate for engineers specifying compact, board-level DRAM solutions that need JEDEC-standard ball-out in a 78-ball FBGA package, operation at nominal 1.2 V (1.14–1.26 V range), and commercial temperature operation from 0°C to 95°C. Detailed electrical and timing characteristics are provided in the manufacturer documentation to support system integration and validation.

Request a quote or submit a pricing and availability inquiry to receive further information and support for integrating the MT40A8G4NEA-062E:F TR into your design.

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