MT40A8G4NEA-062E:F TR
| Part Description |
IC DRAM 32GBIT PAR 78FBGA |
|---|---|
| Quantity | 357 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 6 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 78-FBGA (7.5x11) | Memory Format | DRAM | Technology | SDRAM - DDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | 13.75 ns | Grade | Extended / Automotive-like | ||
| Clock Frequency | 1.6 GHz | Voltage | 1.14V ~ 1.26V | Memory Type | Volatile | ||
| Operating Temperature | 0°C ~ 95°C (TC) | Write Cycle Time Word Page | N/A | Packaging | 78-TFBGA | ||
| Mounting Method | Volatile | Memory Interface | Parallel | Memory Organization | 8G x 4 | ||
| Moisture Sensitivity Level | N/A | RoHS Compliance | Unknown | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | N/A | HTS Code | N/A |
Overview of MT40A8G4NEA-062E:F TR – IC DRAM 32GBIT PAR 78FBGA
The MT40A8G4NEA-062E:F TR is a 32 Gbit TwinDie™ DDR4 SDRAM device implemented as an 8G×4 memory organization with a parallel interface. It combines two Micron 16Gb DDR4 dies into a dual-rank solution supporting JEDEC-standard ball-out in a 78-ball FBGA package (7.5 mm × 11 mm × 1.2 mm).
Designed for high-density DDR4 memory subsystems, this part provides a 3200 MT/s speed grade (‑062E), a 1.14–1.26 V supply range for VDD/VDDQ, and a commercial operating temperature range of 0°C to 95°C, delivering specified timing and refresh behavior for systems requiring robust parallel DRAM capacity.
Key Features
- Memory Architecture TwinDie™ construction combining two 16Gb DDR4 dies into a single 32Gb (8G×4) device with two ranks (dual CS#, ODT, and CKE balls).
- Density & Organization 32 Gbit total capacity organized as 8G×4 with 16 banks per die and 2 ranks for expanded address space and rank-based operation.
- Performance / Timing Speed grade -062E targets 3200 MT/s with CL-tRCD-tRP = 22-22-22 and key timing parameter tAA = 13.75 ns (access time 13.75 ns).
- Clock & I/O 1.6 GHz clock frequency with 1.2 V VDD/VDDQ nominal operation and 1.14–1.26 V specified supply range; VDDQ-terminated I/O per datasheet notes.
- Banking & Concurrency Each rank includes 4 groups of 4 internal banks to support concurrent operation across bank groups.
- Package & Mounting 78-ball FBGA (7.5 mm × 11 mm × 1.2 mm) low-profile package; supplier device package listed as 78-FBGA (7.5×11).
- Temperature & Refresh Commercial operating temperature 0°C to 95°C with defined refresh cycles: 8192 refresh cycles per 64 ms for 0°C–85°C and per 32 ms for 85°C–95°C.
- JEDEC Compliance JEDEC-standard ball-out and timing references correlate to Micron’s 16Gb DDR4 SDRAM documentation for detailed electrical and timing specifications.
Typical Applications
- High-density DDR4 memory subsystems Used where a 32 Gbit parallel DDR4 memory element is required for board-level memory implementations.
- Multi-rank memory designs Dual-rank layout supports systems that leverage multiple ranks for increased memory capacity and address flexibility.
- Compact module and board designs Low-profile 78-ball FBGA (7.5×11) packaging supports space-constrained PCBs requiring high-capacity DRAM.
Unique Advantages
- TwinDie two-rank integration: Combines two 16Gb dies to deliver 32Gb in a single package with dual CS#, ODT, and CKE for rank-enabled designs.
- High-speed DDR4 timing: -062E speed grade at 3200 MT/s with CL = 22 and tAA = 13.75 ns provides defined high-data-rate operation.
- Bank-group concurrency: Four groups of four banks per rank permit concurrent operation across bank groups for improved internal access parallelism.
- Nominal 1.2 V operation: VDD = VDDQ = 1.2 V with an allowed range of 1.14–1.26 V and VDDQ-terminated I/O for standard DDR4 electrical operation.
- Compact FBGA package: 78-ball FBGA (7.5 mm × 11 mm × 1.2 mm) offers a low-profile footprint for high-density board layouts.
- Commercial temperature qualification: Specified operating range of 0°C to 95°C with corresponding refresh cycle requirements documented for system design.
Why Choose MT40A8G4NEA-062E:F TR?
The MT40A8G4NEA-062E:F TR positions itself as a high-density DDR4 SDRAM component for designs that require 32 Gbit capacity in an x4 parallel interface with dual-rank capability. Its TwinDie architecture, 3200 MT/s speed grade, and defined timing parameters (CL/tRCD/tRP = 22-22-22; tAA = 13.75 ns) make it suitable for systems that demand specified DDR4 performance and rank-based memory organization.
This device is appropriate for engineers specifying compact, board-level DRAM solutions that need JEDEC-standard ball-out in a 78-ball FBGA package, operation at nominal 1.2 V (1.14–1.26 V range), and commercial temperature operation from 0°C to 95°C. Detailed electrical and timing characteristics are provided in the manufacturer documentation to support system integration and validation.
Request a quote or submit a pricing and availability inquiry to receive further information and support for integrating the MT40A8G4NEA-062E:F TR into your design.