MT40A8G4VNE-062H:B
| Part Description |
IC DRAM 32GBIT PARALLEL 1.6GHZ |
|---|---|
| Quantity | 432 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 28 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | N/A | Memory Format | DRAM | Technology | SDRAM - DDR4 | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 32 Gbit | Access Time | 13.75 ns | Grade | Extended / Automotive-like | ||
| Clock Frequency | 1.6 GHz | Voltage | 1.14V ~ 1.26V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 95°C (TC) | Write Cycle Time Word Page | N/A | Packaging | N/A | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 8G x 4 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | Unknown | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | N/A | HTS Code | 8542.32.0071 |
Overview of MT40A8G4VNE-062H:B – IC DRAM 32Gbit Parallel 1.6GHz
The MT40A8G4VNE-062H:B is a 32 Gbit TwinDie DDR4 SDRAM device that combines two 16 Gbit DDR4 die to provide dual-rank memory in a single package. It implements a parallel DDR4 interface with an internal organization of 8G × 4 and is intended for designs requiring high-density, dual-rank DDR4 memory components.
Key Features
- TwinDie DDR4 Architecture Combines two 16 Gb DDR4 die into a single 32 Gb device providing two ranks with separate CS#, ODT and CKE signals.
- Memory Organization & Capacity 32 Gbit total capacity arranged as 8G × 4 with 16 banks per rank and two ranks for increased addressability and concurrency.
- Performance Operates with a 1.6 GHz clock frequency and an access time of 13.75 ns (timing indicated for the -062 speed grade).
- DDR4 I/O and Voltage VDD and VDDQ nominal 1.2 V with an allowed supply range of 1.14 V to 1.26 V; 1.2 V VDDQ-terminated I/O is supported.
- Banking and Concurrency Each rank contains 4 groups of 4 internal banks for concurrent operation and efficient memory access patterns.
- Operating Temperature Commercial temperature range with TC from 0°C to 95°C and defined refresh cycle behavior across that range.
- Package Options FBGA package options are documented (78-ball FBGA BAF 10.5 mm × 11 mm × 1.2 mm and 78-ball FBGA NEA 7.5 mm × 11 mm × 1.2 mm); Pb-free options are described in the datasheet.
Unique Advantages
- High-density single-device solution: 32 Gbit capacity in a single TwinDie package reduces board-level component count compared to multiple discrete die.
- Dual-rank capability: Two ranks within the device enable rank-level control (dual CS#, ODT, CKE) for flexible memory subsystem designs.
- Standard DDR4 signaling and supply: 1.2 V operation (1.14–1.26 V range) with VDDQ termination aligns with DDR4 system voltage requirements.
- Defined timing performance: Documented access time of 13.75 ns for the cited speed grade supports predictable system timing analysis.
- Commercial temperature operation: Specified TC range of 0°C to 95°C with refresh cycle specifications for defined thermal behavior.
Why Choose IC DRAM 32GBIT PARALLEL 1.6GHZ?
The MT40A8G4VNE-062H:B delivers a high-density DDR4 memory option built from Micron 16 Gb die in a TwinDie configuration, providing two ranks and a compact option for systems that require large memory capacity with DDR4 signaling and voltage. Its documented timing, voltage range, and bank architecture make it suitable for designers focusing on memory-dense subsystems where predictable DDR4 behavior is required.
This device is appropriate for designs that need scalable memory capacity combined with standard DDR4 electrical characteristics and a commercial operating temperature range. The TwinDie approach simplifies integration of dual-rank memory while maintaining industry-standard DDR4 interfaces.
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