MT40A8G4VNE-062H:B TR

The MT40A8G4VNE-062H:B TR is a 32Gb TwinDie DDR4 SDRAM device organized as 8G × 4 with a parallel memory interface and a 1.6 GHz clock frequency. It combines two 16Gb DDR4 dies to provide two ranks with independent CS#, ODT and CKE signals for multi-rank operation.

Designed for high-density memory implementations, this DDR4 device targets systems requiring high data throughput and compact memory die integration while operating at low core and I/O voltages.

Key Features

• Memory Architecture  32Gb TwinDie DDR4 SDRAM implemented as 8G × 4 using two 16Gb dies to form two ranks; each rank contains 4 groups of 4 internal banks for concurrent operation.
• Performance  Speed grade -062E targets 3200 MT/s (DDR4-3200) with CL‑22 timing and a listed access time of 13.75 ns.
• Clock  Parallel interface with a clock frequency specified at 1.6 GHz corresponding to the DDR4 data rate.
• Power  VDD = VDDQ = 1.2 V nominal with an allowed supply range of 1.14 V to 1.26 V; I/O is terminated to VDDQ.
• Temperature and Refresh  Commercial operating case temperature range from 0°C to 95°C; 8192 refresh cycles in 64 ms for 0°C–85°C and 8192 refresh cycles in 32 ms for 85°C–95°C.
• JEDEC Compliance & Signals  JEDEC-standard ball-out with dual CS#, ODT and CKE for the two ranks to support standard DDR4 system integration.
• Package Options  Offered in low-profile FBGA package options (examples in documentation include 78-ball FBGA BAF and NEA variants); Die revision :B indicated for this part.

Typical Applications

• High-density memory modules  Used where 32Gb DRAM capacity and dual-rank organization are required to increase module density.
• Multi-rank system designs  Dual CS#, ODT and CKE support enables implementation in systems that leverage multiple ranks for concurrency and capacity scaling.
• High-throughput DRAM subsystems  DDR4-3200 class timing and 1.6 GHz clocking support designs that require elevated data rates.

Unique Advantages

• High effective density:  TwinDie construction combines two 16Gb dies to deliver 32Gb in a compact device footprint.
• Dual-rank capability:  Integrated dual CS#, ODT and CKE provides straightforward support for multi-rank memory topologies and concurrent bank operation.
• Low-voltage operation:  1.2 V nominal VDD and VDDQ with a defined 1.14–1.26 V supply window supports modern low-voltage system designs.
• High data-rate timing:  3200 MT/s speed grade with CL‑22 and 13.75 ns cycle timing enables higher throughput memory subsystems.
• Extended commercial temperature support:  0°C to 95°C case operating range with defined refresh behavior for higher-temperature operation.

Why Choose MT40A8G4VNE-062H:B TR?

The MT40A8G4VNE-062H:B TR positions itself as a high-density DDR4 memory device suited to designs that need dual-rank capacity and DDR4-3200 class performance while operating at industry-standard 1.2 V supply levels. Its TwinDie architecture and JEDEC ball-out simplify integration into multi-rank, high-throughput memory subsystems.

This part is appropriate for system architects and module designers targeting compact, high-capacity DRAM implementations that require defined timing (CL‑22), a 1.6 GHz clock frequency, and commercial temperature operation up to 95°C. The documented electrical and timing specifications support predictable integration into JEDEC-compliant DDR4 designs.

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