MT46V128M4FN-6:F TR

The MT46V128M4FN-6:F TR is a 512 Mbit volatile DRAM organized as 128M × 4, implemented as a Double Data Rate (DDR) SDRAM device. It provides a parallel memory interface with a 60-ball FBGA (10 mm × 12.5 mm) package and is specified for commercial temperature operation (0°C to 70°C).

Designed for systems that require a compact, low-voltage DDR memory element, this device combines DDR architecture with source-synchronous data capture (DQS), DLL timing alignment and programmable burst lengths to support standard parallel DDR memory use cases.

Key Features

• Core / Memory Architecture 512 Mbit DDR SDRAM organized as 128M × 4 with four internal banks for concurrent operation.
• DDR Performance Internal pipelined DDR architecture enabling two data accesses per clock cycle; device speed grade -6 supports a clock frequency of 167 MHz.
• Data Timing and Capture Bidirectional data strobe (DQS) transmitted/received with data, DLL alignment of DQ/DQS with clock, and DQS edge-aligned for READs and center-aligned for WRITEs.
• Programmable Burst and Refresh Programmable burst lengths of 2, 4 or 8 with auto-refresh and self-refresh options documented in the datasheet.
• Voltage and Timing Specified supply range VDD/VDDQ = 2.3 V to 2.7 V; typical access timing includes an access time of 700 ps and a write cycle time (word page) of 15 ns.
• Physical Package and Temperature 60-TFBGA (60-ball FBGA, 10 mm × 12.5 mm) package; commercial operating temperature 0°C to 70°C.
• Parallel Interface Standard parallel DDR interface with differential clock inputs (CK and CK#) and data mask (DM) support.

Typical Applications

• System Memory for Embedded Designs Use as a 512 Mbit parallel DDR SDRAM element where compact FBGA packaging and standard DDR timing are required.
• Board-Level SDRAM Expansion Suitable for adding DDR memory density in designs that accept a 60-ball FBGA footprint and a 2.5 V I/O supply range.
• Consumer and Commercial Electronics Applicable to commercial-temperature electronics that require a 512 Mbit volatile DDR memory with programmable burst operation and auto-refresh.

Unique Advantages

• Double-Data-Rate Throughput: Internal DDR architecture enables two data transfers per clock cycle, increasing effective bandwidth at a given clock rate.
• Source-Synchronous Data Capture: DQS-based read/write timing with DLL alignment improves robustness of data capture relative to the clock.
• Flexible Burst and Bank Operation: Programmable burst lengths (2/4/8) and four internal banks support burst-oriented access patterns and concurrent operations.
• Compact FBGA Package: 60-ball FBGA (10 mm × 12.5 mm) allows higher density board layouts while keeping package size small.
• Low-Voltage Operation: VDD/VDDQ specified from 2.3 V to 2.7 V supports low-voltage system designs using 2.5 V I/O signaling.

Why Choose MT46V128M4FN-6:F TR?

The MT46V128M4FN-6:F TR provides a standardized DDR SDRAM option in a compact 60-ball FBGA package, delivering 512 Mbit density with DDR timing features such as DQS, DLL alignment and programmable burst lengths. Its 2.3 V–2.7 V supply range and documented timing (167 MHz clock rate for speed grade -6) make it suitable for designs that require predictable DDR behavior and commercial-temperature operation.

This device is appropriate for engineers and procurement teams specifying parallel DDR memory at 512 Mbit density where compact packaging, low-voltage operation and standard DDR features are required. Technical details and timing parameters are available in the device datasheet for integration and system timing validation.

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