MT29F64G08CFACBWP-12Z:C TR

IC FLASH 64GBIT PAR 48TSOP I
Part Description

IC FLASH 64GBIT PAR 48TSOP I

Quantity 165 Available (as of May 4, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package48-TSOP IMemory FormatFLASHTechnologyFLASH - NAND
Memory Size64 GbitAccess TimeN/AGradeCommercial
Clock Frequency83 MHzVoltage2.7V ~ 3.6VMemory TypeNon-Volatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word PageN/APackaging48-TFSOP (0.724", 18.40mm Width)
Mounting MethodNon-VolatileMemory InterfaceParallelMemory Organization8G x 8
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCN3A991B1AHTS Code8542.32.0071

Overview of MT29F64G08CFACBWP-12Z:C TR – IC FLASH 64GBIT PAR 48TSOP I

The MT29F64G08CFACBWP-12Z:C TR is a 64 Gbit non-volatile NAND flash memory device in a parallel interface configuration. It implements NAND flash architecture organized as 8G × 8 and is supplied in a 48-TSOP I package.

Designed for systems that require high-density parallel flash storage, this device offers a defined operating temperature range, standard supply voltage window, and a specified clock frequency for parallel operation.

Key Features

  • Memory Type & Capacity 64 Gbit NAND flash organized as 8G × 8, providing high-density non-volatile storage in a single device.
  • Interface & Performance Parallel memory interface with a specified clock frequency of 83 MHz for synchronous parallel operation.
  • Voltage Supply Operates over a supply range of 2.7 V to 3.6 V, compatible with common 3.0 V systems.
  • Package 48-TFSOP / 48-TSOP I package (0.724", 18.40 mm width) suitable for board-level surface-mount integration.
  • Operating Temperature Specified operating ambient temperature range of 0°C to 70°C (TA).
  • Manufacturer Supplied by Micron Technology Inc., identified by the full part number MT29F64G08CFACBWP-12Z:C TR.

Typical Applications

  • Embedded Storage Use as on-board non-volatile storage for embedded systems that require parallel NAND flash capacity.
  • Firmware and Boot Memory Suitable for storing firmware, bootloaders, or system code in designs that use parallel flash architectures.
  • Consumer and Industrial Electronics Integration into devices that need high-density non-volatile memory in a compact TSOP package within the specified temperature range.

Unique Advantages

  • High-density NAND capacity: 64 Gbit organization enables reduced board-level component count for large storage requirements.
  • Parallel interface with defined clock rate: 83 MHz clock frequency supports synchronous parallel access patterns where parallel NAND is required.
  • <strong-Wide supply compatibility: 2.7 V to 3.6 V supply range accommodates common 3 V system power rails.
  • Compact surface-mount package: 48-TSOP I package (18.40 mm width) simplifies placement in space-constrained designs.
  • Operating temperature specified: 0°C to 70°C ambient rating provides clear thermal limits for application planning.

Why Choose MT29F64G08CFACBWP-12Z:C TR?

The MT29F64G08CFACBWP-12Z:C TR combines high-density 64 Gbit NAND flash storage with a parallel interface and a compact 48-TSOP I package, offering a clear specification set for designers selecting non-volatile memory for embedded and electronic applications. Its defined clock frequency, supply voltage window, and ambient temperature range make it suitable for systems that require predictable electrical and thermal behavior.

This device is appropriate for design teams needing a single-device high-capacity parallel flash solution from Micron Technology Inc., enabling straightforward integration into boards that accommodate TSOP packages and operate within the stated voltage and temperature limits.

Request a quote or contact sales to discuss availability, lead times, and pricing for MT29F64G08CFACBWP-12Z:C TR.

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