MT29F64G08CFACBWP-12:C
| Part Description |
IC FLASH 64GBIT PAR 48TSOP I |
|---|---|
| Quantity | 1,600 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 48-TSOP I | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 83 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 48-TFSOP (0.724", 18.40mm Width) | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 8G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F64G08CFACBWP-12:C – 64 Gbit Parallel NAND Flash, 48‑TSOP I
The MT29F64G08CFACBWP-12:C is a 64 Gbit non-volatile NAND flash memory organized as 8G × 8. It provides parallel memory access and is implemented in a 48‑TSOP I package for board-level integration.
Targeted for designs that require high-density parallel flash storage, the device operates on a 2.7 V to 3.6 V supply and supports operation at ambient temperatures from 0°C to 70°C.
Key Features
- Memory Type Non-volatile FLASH NAND memory with a total capacity of 64 Gbit organized as 8G × 8.
- Interface Parallel memory interface for byte-wide access consistent with the 8-bit organization.
- Performance Supports a clock frequency of up to 83 MHz for timing and access characteristics defined by the parallel interface.
- Power Wide supply range of 2.7 V to 3.6 V to support common 3 V system rails.
- Package Supplied in a 48‑TSOP I (48‑TFSOP, 0.724" / 18.40 mm width) package for compact board mounting.
- Operating Temperature Rated for ambient operation from 0°C to 70°C (TA).
Typical Applications
- Embedded Storage Use as high-density non-volatile storage where 64 Gbit parallel NAND flash is required for code or data retention.
- Consumer Electronics Integration into consumer devices that require parallel FLASH memory in a compact TSOP package and 2.7 V–3.6 V supply compatibility.
- Board-Level Memory Expansion Suitable for board designs needing a 48‑TSOP I footprint and a byte-wide parallel memory interface.
Unique Advantages
- High Capacity: 64 Gbit total memory supports larger code and data storage in a single device.
- Byte-Wide Organization: 8G × 8 memory organization provides a native 8-bit parallel interface for straightforward integration with byte-oriented buses.
- Flexible Power Range: 2.7 V to 3.6 V supply compatibility simplifies integration with common 3 V system rails.
- Compact TSOP Package: 48‑TSOP I (0.724", 18.40 mm) package enables dense board layouts and straightforward solder-down mounting.
- Commercial Temperature Rating: Specified for 0°C to 70°C ambient operation for use in commercial-temperature applications.
Why Choose IC FLASH 64GBIT PAR 48TSOP I?
The MT29F64G08CFACBWP-12:C positions as a straightforward, high-density parallel NAND flash option for designs that require 64 Gbit of non-volatile storage with a byte-wide interface. Its combination of 8G × 8 organization, 83 MHz clock capability, and 2.7 V–3.6 V supply compatibility makes it suitable for systems needing compact board-level flash in a 48‑TSOP I package.
Engineers specifying this device will appreciate the balance of capacity, interface simplicity, and a familiar TSOP form factor for PCB integration, particularly in commercial-temperature applications.
Request a quote or submit a quotation request to obtain pricing, availability, and lead-time information for the MT29F64G08CFACBWP-12:C.
