MT29F64G08EBAAAWP-Z:A

IC FLASH 64GBIT PAR 48TSOP I
Part Description

IC FLASH 64GBIT PAR 48TSOP I

Quantity 28 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package48-TSOP IMemory FormatFLASHTechnologyFLASH - NAND
Memory Size64 GbitAccess TimeN/AGradeCommercial
Clock FrequencyN/AVoltage2.7V ~ 3.6VMemory TypeNon-Volatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word PageN/APackaging48-TFSOP (0.724", 18.40mm Width)
Mounting MethodNon-VolatileMemory InterfaceParallelMemory Organization8G x 8
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCN3A991B1AHTS Code8542.32.0071

Overview of MT29F64G08EBAAAWP-Z:A – IC FLASH 64GBIT PAR 48TSOP I

The MT29F64G08EBAAAWP-Z:A is a 64 Gbit non-volatile FLASH device implementing NAND technology with an 8G × 8 memory organization. It provides parallel memory access in a 48-TSOP I package for systems that require high-density, board-mounted NAND storage.

Designed for use in applications that integrate parallel NAND FLASH, the device operates from a 2.7 V to 3.6 V supply and supports a commercial operating temperature range of 0°C to 70°C, enabling straightforward integration into a variety of embedded and legacy parallel-interface designs.

Key Features

  • Memory Core  64 Gbit NAND FLASH memory organized as 8G × 8 for byte-wide parallel access and high-density storage.
  • Interface  Parallel memory interface compatible with 8-bit parallel systems thanks to the 8G × 8 organization.
  • Power  Operates from a 2.7 V to 3.6 V supply range to accommodate common 3.3 V system rails.
  • Package  Delivered in a 48-TSOP I (48-TFSOP, 0.724", 18.40 mm width) surface-mount package for compact PCB mounting.
  • Temperature Range  Commercial ambient operating range of 0°C to 70°C (TA).
  • Non-Volatile Technology  NAND FLASH technology preserves stored data without power, suitable for persistent storage needs.

Typical Applications

  • High-density non-volatile storage  Provides board-level NAND FLASH capacity for systems needing large on-board data storage.
  • Embedded systems  Fits embedded designs requiring parallel FLASH memory in a compact 48-TSOP I package.
  • Legacy parallel-interface designs  Suitable for designs that use an 8-bit parallel memory interface due to its 8G × 8 organization.

Unique Advantages

  • High storage capacity: 64 Gbit density enables larger data or firmware images on a single device, reducing the need for multiple parts.
  • Parallel interface compatibility: Byte-wide (×8) organization simplifies integration into existing parallel-memory controllers and boards.
  • Flexible power range: 2.7 V to 3.6 V operation supports common 3.3 V system rails for straightforward power design.
  • Compact surface-mount package: 48-TSOP I package (0.724", 18.40 mm width) allows space-efficient PCB layouts.
  • Commercial temperature support: 0°C to 70°C operating range covers typical consumer and general-purpose electronics environments.
  • Non-volatile data retention: NAND FLASH technology maintains stored data without power, suitable for persistent storage requirements.

Why Choose IC FLASH 64GBIT PAR 48TSOP I?

The MT29F64G08EBAAAWP-Z:A positions itself as a high-density, parallel NAND FLASH option that combines 64 Gbit capacity with an 8-bit parallel interface and a compact 48-TSOP I package. Its supply voltage range and commercial temperature rating make it appropriate for designs that need reliable on-board non-volatile storage within standard 3.3 V systems.

This device is well suited to engineers and procurement teams designing embedded and legacy parallel-interface systems that require scalable storage density, simplified board integration, and persistent memory without complex power requirements.

For pricing, availability, or to request a quote for MT29F64G08EBAAAWP-Z:A, please submit a quote request or contact our sales team for assistance.

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