MT29F64G08CBEFBWP:F
| Part Description |
IC FLASH 64GBIT PAR 48TSOP I |
|---|---|
| Quantity | 266 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 48-TSOP I | Memory Format | FLASH | Technology | FLASH - NAND (MLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 48-TFSOP (0.724", 18.40mm Width) | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 8G x 8 | ||
| Moisture Sensitivity Level | Vendor Undefined | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | OBSOLETE | HTS Code | 0000.00.0000 |
Overview of MT29F64G08CBEFBWP:F – IC FLASH 64GBIT PAR 48TSOP I
The MT29F64G08CBEFBWP:F is a 64 Gbit non-volatile NAND flash memory device using MLC technology with an 8G × 8 memory organization. It provides parallel memory access and is supplied in a 48-TSOP I / 48-TFSOP package with a 0.724" (18.40 mm) width.
Designed for applications requiring high-density parallel flash storage, the device operates from a 2.7 V to 3.6 V supply and is specified for an ambient operating temperature range of 0°C to 70°C.
Key Features
- Memory Type Non-volatile NAND flash memory using MLC technology for multi-level cell storage.
- Capacity & Organization 64 Gbit total capacity arranged as 8G × 8 for byte-wide parallel access.
- Interface Parallel memory interface to support byte-oriented system architectures.
- Supply Voltage Operates from 2.7 V to 3.6 V, suitable for 3 V-class systems.
- Package 48-TSOP I (48-TFSOP, 0.724" / 18.40 mm width) package for board-level implementation.
- Operating Temperature Specified for operation from 0°C to 70°C (TA).
Unique Advantages
- High-density storage: 64 Gbit capacity provides substantial non-volatile storage in a single device footprint.
- Byte-wide organization: 8G × 8 arrangement supports parallel, byte-oriented memory access patterns.
- Standard supply compatibility: 2.7 V–3.6 V supply range aligns with common 3 V system rails.
- Compact TSOP packaging: 48-TSOP I package with 18.40 mm width enables compact board layout.
- MLC NAND technology: Multi-level cell architecture enables higher density per die compared to single-level cell alternatives.
Why Choose IC FLASH 64GBIT PAR 48TSOP I?
The MT29F64G08CBEFBWP:F provides a high-density, parallel NAND flash option in a compact 48-TSOP I package, suitable for designs that require substantial non-volatile storage with byte-wide access. Its 2.7 V–3.6 V supply range and specified 0°C–70°C operating temperature make it appropriate for systems operating within standard commercial conditions.
This device is a practical choice for engineers seeking a verified MLC NAND solution with documented memory organization and package dimensions for predictable integration into board-level designs.
Request a quote or contact sales to discuss availability, pricing, and integration details for the MT29F64G08CBEFBWP:F.
