MT29F64G08CBEDBJ4-12M:D TR
| Part Description |
IC FLASH 64GBIT PAR 132VBGA |
|---|---|
| Quantity | 576 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 132-VBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 83 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 132-VBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 8G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F64G08CBEDBJ4-12M:D TR – IC FLASH 64GBIT PAR 132VBGA
The MT29F64G08CBEDBJ4-12M:D TR is a 64 Gbit non-volatile FLASH NAND memory device organized as 8G × 8. It provides parallel memory access and is specified with an 83 MHz clock frequency for data transfers.
Packaged in a 132-VBGA (12×18) form factor and operating over a 2.7 V to 3.6 V supply range, this device is intended for systems that require high-density parallel NAND flash storage within commercial temperature limits.
Key Features
- Memory Architecture Non-volatile FLASH NAND memory with a total capacity of 64 Gbit organized as 8G × 8.
- Interface & Performance Parallel memory interface with an 83 MHz clock frequency for synchronous data access.
- Power Wide supply voltage range from 2.7 V to 3.6 V to support common system power rails.
- Package & Mounting 132-VBGA package (12×18) providing a compact BGA footprint for board-level integration.
- Operating Conditions Specified ambient operating temperature range of 0°C to 70°C (TA).
- Memory Format & Technology FLASH - NAND technology providing non-volatile storage.
Unique Advantages
- High-density storage: 64 Gbit capacity delivers substantial non-volatile storage in a single device, reducing the need for multiple memory components.
- Parallel interface: Parallel memory access with an 83 MHz clock enables straightforward integration into systems designed for parallel NAND devices.
- Flexible power compatibility: 2.7 V to 3.6 V supply range supports common system voltage levels for simplified power design.
- Compact BGA package: 132-VBGA (12×18) package minimizes board area while providing a BGA mounting approach for reliable solder connections.
- Commercial temperature rating: 0°C–70°C operating range aligns with commercial-environment applications and system requirements.
Why Choose MT29F64G08CBEDBJ4-12M:D TR?
This device is positioned as a high-density parallel NAND flash memory solution that balances storage capacity, board-level compactness, and straightforward power requirements. Its combination of 64 Gbit capacity, parallel interface at 83 MHz, and a 132-VBGA package makes it suitable for designs that require a single-component non-volatile memory solution within commercial temperature limits.
The MT29F64G08CBEDBJ4-12M:D TR is appropriate for customers needing predictable electrical and thermal characteristics, compact packaging, and a standard parallel NAND memory architecture to integrate into existing system designs.
Request a quote or contact sales to inquire about availability, pricing, and lead times for the MT29F64G08CBEDBJ4-12M:D TR.
