MT29F64G08CBEBBL84A3WC1
| Part Description |
IC FLASH 64GBIT PARALLEL DIE |
|---|---|
| Quantity | 654 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | Die | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | Die | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 8G x 8 | ||
| Moisture Sensitivity Level | N/A | RoHS Compliance | Unknown | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | OBSOLETE | HTS Code | 0000.00.0000 |
Overview of MT29F64G08CBEBBL84A3WC1 – IC FLASH 64GBIT PARALLEL DIE
The MT29F64G08CBEBBL84A3WC1 is a 64 Gbit NAND Flash memory die from Micron Technology Inc. It is organized as 8G × 8 and provides non-volatile storage in a parallel memory interface format.
Designed for integration at the die level, this NAND Flash component targets applications requiring high-density, non-volatile memory with a 2.7 V to 3.6 V supply range and an operating temperature range of 0°C to 70°C (TA).
Key Features
- Memory Type Non-volatile FLASH (NAND) technology for persistent data storage without power.
- Density & Organization 64 Gbit capacity organized as 8G × 8, providing high-density storage in a single die.
- Interface Parallel memory interface suitable for parallel data access architectures.
- Voltage Supply Operates from 2.7 V to 3.6 V, supporting common 3.3 V system domains.
- Package Supplied as a die, intended for integration into custom packages or multi-die assemblies.
- Operating Temperature Specified for 0°C to 70°C (TA), appropriate for standard commercial-temperature applications.
Unique Advantages
- High-density storage: 64 Gbit capacity enables larger firmware, data logging, or file storage within a single die.
- Parallel interface compatibility: Parallel memory interface supports designs that require byte-wide or parallel data transfers.
- Flexible supply range: 2.7 V–3.6 V operation allows compatibility with common 3.3 V system rails.
- Die-level integration: Delivered as a die for direct integration into custom packages or multi-die modules, offering design flexibility.
- Commercial temperature rating: 0°C to 70°C operation matches standard commercial application requirements.
Why Choose IC FLASH 64GBIT PARALLEL DIE?
The MT29F64G08CBEBBL84A3WC1 offers a straightforward, high-density NAND Flash solution for designers requiring non-volatile storage in a die form factor. Its 8G × 8 organization, parallel interface, and 2.7 V–3.6 V supply make it suitable for integration into a variety of commercial electronic designs that need persistent memory.
This die-level NAND Flash is appropriate for customers focused on custom packaging or multi-die assemblies who require a verifiable set of electrical and environmental specifications, including capacity, interface type, supply voltage, and operating temperature range.
Request a quote or contact sales to discuss availability, pricing, and integration details for MT29F64G08CBEBBL84A3WC1.
