MT29F64G08CBCGBL04A3WC1-M
| Part Description |
IC FLASH 64GBIT PARALLEL DIE |
|---|---|
| Quantity | 1,011 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | Die | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | Die | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 8G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F64G08CBCGBL04A3WC1-M – IC FLASH 64GBIT PARALLEL DIE
The MT29F64G08CBCGBL04A3WC1-M is a 64 Gbit non-volatile FLASH NAND memory die from Micron Technology Inc., organized as 8G × 8 with a parallel memory interface. It provides die-level NAND storage intended for integration into designs that require parallel FLASH memory.
The device operates from 2.7 V to 3.6 V and is specified for ambient operation from 0°C to 70°C (TA), enabling use in systems that match these electrical and thermal parameters.
Key Features
- Memory — 64 Gbit NAND Non-volatile FLASH NAND memory with a total capacity of 64 Gbit organized as 8G × 8.
- Interface — Parallel Parallel memory interface for integration into systems that use parallel NAND connectivity.
- Voltage — 2.7 V to 3.6 V Operates across a supply voltage range of 2.7 V to 3.6 V to match common system rails.
- Thermal — 0°C–70°C (TA) Specified ambient operating temperature range of 0°C to 70°C.
- Package — Die Supplied as a die (Supplier Device Package: Die) for direct die integration or custom packaging workflows.
- Technology — FLASH (NAND) NAND FLASH memory format providing non-volatile storage at die level.
Typical Applications
- Embedded systems — Provides parallel NAND non-volatile storage for embedded designs that require die-level memory integration.
- Custom memory subsystems — Suitable for custom storage modules and multi-die assemblies needing 64 Gbit capacity in a die form.
- Integration into bespoke electronics — Used where direct die integration of parallel NAND FLASH is required to meet form-factor or packaging constraints.
Unique Advantages
- High-density storage: 64 Gbit capacity with an 8G × 8 organization delivers substantial storage per die.
- Parallel interface compatibility: Native parallel memory interface supports designs built around parallel NAND architectures.
- Flexible supply range: 2.7 V–3.6 V operation aligns with common system power rails for straightforward integration.
- Die-level integration: Supplied as a die to enable custom packaging, multi-die assemblies, or direct die placement strategies.
- Defined operating conditions: Specified ambient temperature range (0°C–70°C) and electrical limits provide clear design constraints.
Why Choose IC FLASH 64GBIT PARALLEL DIE?
The MT29F64G08CBCGBL04A3WC1-M positions itself as a straightforward, die-level NAND FLASH solution from Micron Technology Inc. for designs that require a 64 Gbit parallel NAND device with defined electrical and thermal specifications. Its 8G × 8 organization, parallel interface, and 2.7 V–3.6 V supply window make it suitable for integration into custom memory subsystems and products that demand die-form FLASH.
Engineers and procurement teams selecting this die will benefit from clear capacity and interface characteristics, die-level packaging for integration flexibility, and documented operating ranges to guide system design and qualification.
Request a quote or submit an inquiry to check availability and pricing for the MT29F64G08CBCGBL04A3WC1-M.
