MT29F64G08CBCBBH1-10X:B TR
| Part Description |
IC FLASH 64GBIT PARALLEL 100VBGA |
|---|---|
| Quantity | 68 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 100-VBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 100 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 100-VBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 8G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F64G08CBCBBH1-10X:B TR – IC FLASH 64GBIT PARALLEL 100VBGA
The MT29F64G08CBCBBH1-10X:B TR is a 64 Gbit non-volatile NAND flash memory device provided in a 100‑VBGA (12×18) package. It implements an 8G × 8 memory organization with a parallel memory interface and operates with a 100 MHz clock.
Designed for systems requiring parallel NAND flash storage, this device supports standard 2.7 V to 3.6 V supply rails and a specified ambient operating temperature range of 0°C to 70°C (TA).
Key Features
- Memory Technology NAND flash non-volatile memory providing persistent data storage.
- Capacity & Organization 64 Gbit memory capacity arranged as 8G × 8 for byte-wide parallel access.
- Interface & Performance Parallel memory interface supporting operation at a 100 MHz clock frequency.
- Supply Voltage Operates from 2.7 V to 3.6 V, compatible with standard 3.3 V systems.
- Package 100‑VBGA package (12×18) suitable for board-level integration where a BGA footprint is required.
- Operating Temperature Rated for ambient operation from 0°C to 70°C (TA).
Typical Applications
- Parallel flash storage systems — Provides high-density non-volatile storage in designs that use parallel NAND interfaces.
- Firmware and code storage — Stores boot code and firmware images where a 64 Gbit NAND device is required.
- Embedded devices with BGA footprint — Fits applications needing a compact 100‑VBGA package (12×18) for board population.
Unique Advantages
- High density 64 Gbit capacity: Offers substantial non-volatile storage in a single device, reducing the need for multiple components.
- Byte-wide 8G × 8 organization: Simplifies interface integration for designs that require byte-oriented access.
- Parallel interface at 100 MHz: Matches designs that rely on parallel NAND timing and clocking conventions.
- Flexible supply range (2.7 V–3.6 V): Enables operation across common 3.3 V system rails.
- Compact 100‑VBGA package (12×18): Reduces PCB area compared to multiple discrete memory packages while supporting BGA assembly.
Why Choose IC FLASH 64GBIT PARALLEL 100VBGA?
The MT29F64G08CBCBBH1-10X:B TR positions itself as a straightforward, high-density NAND flash option for designs that require a parallel memory interface, a 64 Gbit capacity, and a compact 100‑VBGA (12×18) package. Its 2.7 V–3.6 V supply compatibility and 0°C to 70°C ambient rating make it suitable for a range of standard electronic systems.
This device is appropriate for engineers and procurement teams seeking a single-device solution for substantial non-volatile storage with byte-wide organization and parallel interface characteristics.
Request a quote or submit an inquiry to receive pricing and availability information for the MT29F64G08CBCBBH1-10X:B TR.
