MT29F64G08CBCBBH1-10X:B
| Part Description |
IC FLASH 64GBIT PARALLEL 100VBGA |
|---|---|
| Quantity | 128 Available (as of May 6, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 100-VBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 100 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 100-VBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 8G x 8 | ||
| Moisture Sensitivity Level | N/A | RoHS Compliance | Unknown | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F64G08CBCBBH1-10X:B – IC FLASH 64GBIT PARALLEL 100VBGA
The MT29F64G08CBCBBH1-10X:B is a 64 Gbit NAND flash memory device in a parallel memory organization (8G × 8). It implements non-volatile FLASH NAND technology and is supplied in a compact 100‑VBGA (12×18) package.
Designed for systems that require parallel NAND non-volatile storage, the device operates at a clock frequency of 100 MHz and supports a 2.7 V to 3.6 V supply voltage with an ambient operating temperature range of 0 °C to 70 °C.
Key Features
- Memory Core 64 Gbit capacity organized as 8G × 8 using FLASH – NAND technology for non-volatile storage.
- Interface and Performance Parallel memory interface with a specified clock frequency of 100 MHz to support synchronous parallel access patterns.
- Power Supports a supply voltage range of 2.7 V to 3.6 V, enabling compatibility with common 3 V system power rails.
- Package Supplied in a 100‑VBGA (12×18) package, offering a compact footprint for board-level integration.
- Operating Conditions Rated for ambient operation from 0 °C to 70 °C (TA), suitable for commercial-temperature environments.
Typical Applications
- Non-volatile storage systems — Provides 64 Gbit parallel NAND flash capacity for systems that require persistent data storage.
- Embedded system memory — Used where parallel FLASH memory and a 2.7 V–3.6 V supply are required.
- Space-constrained designs — The 100‑VBGA (12×18) package supports compact board layouts that need high-density memory.
Unique Advantages
- High-density 64 Gbit capacity: Enables large non-volatile storage within a single device, reducing component count.
- Parallel interface at 100 MHz: Supports parallel access patterns with a specified clock rate for predictable timing integration.
- Wide supply voltage support: 2.7 V to 3.6 V compatibility simplifies integration with standard 3 V system rails.
- Compact VBGA package: 100‑VBGA (12×18) packaging minimizes PCB space while providing the required I/O density.
- Commercial temperature rating: Specified operation from 0 °C to 70 °C for typical commercial environments.
- Manufacturer: Produced by Micron Technology Inc., a recognized supplier of memory devices.
Why Choose IC FLASH 64GBIT PARALLEL 100VBGA?
The MT29F64G08CBCBBH1-10X:B combines 64 Gbit NAND flash capacity, a parallel interface at 100 MHz, and a compact 100‑VBGA (12×18) footprint to meet design requirements for high-density non-volatile storage with predictable electrical and thermal parameters. Its 2.7 V–3.6 V supply range and commercial temperature rating make it suitable for a wide range of general-purpose applications that need parallel FLASH memory.
This device is suitable for designers and procurement teams specifying parallel NAND memory where device-level capacity, package footprint, and standard voltage compatibility are the primary selection criteria. Choosing a Micron-manufactured part supports continuity with an established memory supplier.
Request a quote or contact sales to discuss availability, lead times, and pricing for MT29F64G08CBCBBH1-10X:B.
