MT29F64G08CBCGBWP-B:G TR

IC FLASH 64GBIT PAR 48TSOP I
Part Description

IC FLASH 64GBIT PAR 48TSOP I

Quantity 1,983 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package48-TSOP IMemory FormatFLASHTechnologyFLASH - NAND
Memory Size64 GbitAccess TimeN/AGradeCommercial
Clock FrequencyN/AVoltage2.7V ~ 3.6VMemory TypeNon-Volatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word PageN/APackaging48-TFSOP (0.724", 18.40mm Width)
Mounting MethodNon-VolatileMemory InterfaceParallelMemory Organization8G x 8
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCN3A991B1AHTS Code8542.32.0071

Overview of MT29F64G08CBCGBWP-B:G TR – IC FLASH 64GBIT PAR 48TSOP I

The MT29F64G08CBCGBWP-B:G TR is a 64 Gbit NAND flash memory organized as 8G × 8 with a parallel memory interface. It is a non-volatile FLASH NAND device supplied in a 48-TSOP I package and operates from a 2.7 V to 3.6 V supply voltage.

This device targets designs that require high-density parallel NAND storage in a standardized 48-TSOP I footprint and operate within a 0 °C to 70 °C ambient temperature range.

Key Features

  • Memory Type & Technology Non-volatile FLASH memory using NAND technology for persistent data storage.
  • Memory Size & Organization 64 Gbit capacity organized as 8G × 8 to provide a high-density memory footprint.
  • Interface Parallel memory interface for compatibility with parallel NAND host controllers and board-level designs.
  • Supply Voltage Operates from 2.7 V to 3.6 V, supporting common 3 V system power rails.
  • Package 48-TFSOP / 48-TSOP I package (0.724" / 18.40 mm width) for board-level integration in TSOP I footprints.
  • Operating Temperature Specified for 0 °C to 70 °C (TA), suitable for commercial temperature-range applications.

Typical Applications

  • Parallel NAND storage systems — Provides 64 Gbit of non-volatile parallel FLASH for designs that use parallel memory interfaces.
  • Board-level firmware and data storage — Fits 48-TSOP I footprints for direct replacement or new board integration where persistent storage is required.
  • Systems with 3 V supply rails — Operates across a 2.7 V to 3.6 V range to align with common system power architectures.
  • Commercial temperature applications — Designed for use in environments where ambient temperature remains between 0 °C and 70 °C.

Unique Advantages

  • High-density storage: 64 Gbit capacity enables large on-board non-volatile storage without increasing component count.
  • Parallel interface compatibility: Parallel memory interface simplifies integration into existing parallel-NAND host designs.
  • Wide supply tolerance: 2.7 V to 3.6 V operation supports standard 3 V system power domains and provides design flexibility.
  • Standard TSOP I package: 48-TSOP I (18.40 mm width) package facilitates board-level placement and replacement in established footprints.
  • Commercial temperature rating: Specified 0 °C to 70 °C operation for use in typical commercial electronic systems.

Why Choose IC FLASH 64GBIT PAR 48TSOP I?

The MT29F64G08CBCGBWP-B:G TR positions itself as a straightforward, high-density parallel NAND FLASH option for designs that require persistent storage in a 48-TSOP I package. Its combination of 64 Gbit capacity, 8G × 8 organization, and 2.7 V–3.6 V supply range makes it suitable for systems built around parallel memory interfaces and standard 3 V power domains.

This device is appropriate for engineers and procurement teams seeking a commercial-temperature-range NAND FLASH solution that integrates into TSOP I footprints and supports board-level firmware and data storage needs while maintaining compatibility with parallel host controllers.

Request a quote or contact sales to inquire about availability, pricing, and lead times for the MT29F64G08CBCGBWP-B:G TR.

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