MT29F64G08AMCBBH2-12:B
| Part Description |
IC FLASH 64GBIT PARALLEL 100TBGA |
|---|---|
| Quantity | 69 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 100-TBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 83 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 100-TBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 8G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F64G08AMCBBH2-12:B – IC FLASH 64GBIT PARALLEL 100TBGA
The MT29F64G08AMCBBH2-12:B from Micron Technology Inc. is a 64 Gbit non-volatile FLASH - NAND memory device with a parallel memory interface. It delivers an 8G x 8 memory organization in a 100-TBGA (12x18) package for board-level integration where parallel NAND storage is required.
This device operates at a clock frequency of 83 MHz, supports a supply voltage range of 2.7 V to 3.6 V, and is specified for an ambient operating temperature range of 0°C to 70°C.
Key Features
- Memory Technology FLASH - NAND non-volatile memory provides persistent storage with a memory size of 64 Gbit and an organization of 8G × 8.
- Interface & Performance Parallel memory interface with a clock frequency of 83 MHz for synchronous parallel operation.
- Power Operates from a 2.7 V to 3.6 V supply range to support common 3.3 V system rails.
- Package Supplied in a 100-TBGA package (12×18) to enable compact board-level placement.
- Temperature Range Specified for operation from 0°C to 70°C (TA) for commercial temperature environments.
- Memory Format Memory format: FLASH, designed for non-volatile data storage.
Typical Applications
- Parallel NAND storage systems Use where a 64 Gbit parallel FLASH - NAND device is required for board-level memory.
- High-density on-board memory Designs that need 64 Gbit of non-volatile storage in a 100-TBGA (12×18) package footprint.
- Commercial embedded devices Applications operating within 0°C to 70°C and supplied from 2.7 V to 3.6 V that require parallel NAND flash.
Unique Advantages
- High-density storage: 64 Gbit capacity in an 8G × 8 organization provides substantial non-volatile memory capacity per device.
- Parallel interface support: Parallel memory interface and 83 MHz clock frequency enable integration into parallel-NAND architectures.
- Compact BGA package: 100-TBGA (12×18) package allows for a smaller PCB footprint compared with larger packages.
- Flexible supply voltage: 2.7 V to 3.6 V operation supports common 3.3 V system rails.
- Commercial temperature rating: Rated for 0°C to 70°C ambient operation to meet typical commercial-environment requirements.
- Manufacturer backing: Produced by Micron Technology Inc., identified by the MT29F64G08AMCBBH2-12:B part number.
Why Choose IC FLASH 64GBIT PARALLEL 100TBGA?
The MT29F64G08AMCBBH2-12:B provides a straightforward, high-density parallel NAND flash option in a compact 100-TBGA (12×18) package. With a 64 Gbit capacity, 8G × 8 organization, 83 MHz clocking, and a 2.7 V to 3.6 V supply range, it is suited to designs that require parallel FLASH - NAND memory within commercial temperature limits.
Manufactured by Micron Technology Inc., this device is specified for board-level integration where parallel NAND flash storage and a compact BGA footprint are required.
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