MT29F64G08AKCBBH2-12:B TR

The MT29F64G08AKCBBH2-12:B TR is a 64 Gbit non-volatile NAND flash memory device provided in a 100‑TBGA package. It uses FLASH – NAND technology with an 8G × 8 memory organization and a parallel memory interface.

With a 2.7 V to 3.6 V supply range, 83 MHz clock frequency, and an operating ambient temperature range of 0°C to 70°C, this device is intended for compact board-level applications that require parallel NAND flash storage in a 100‑TBGA (12×18) footprint.

Key Features

• Memory Type & Capacity Non-volatile FLASH – NAND memory with a capacity of 64 Gbit organized as 8G × 8.
• Memory Interface Parallel interface for direct bus integration with compatible host controllers.
• Clock Frequency Supports operation with an 83 MHz clock frequency.
• Voltage Supply Operates from 2.7 V to 3.6 V, enabling compatibility with standard 3 V systems.
• Operating Temperature Rated for ambient operation from 0°C to 70°C (TA).
• Package Supplied in a compact 100‑TBGA package, specified as 12×18 mm footprint.

Typical Applications

• Embedded Storage — Provides non-volatile NAND flash capacity for board-level embedded storage where a parallel interface and compact TBGA package are required.
• Consumer Devices — Suited to consumer electronics designs that operate within a 0°C to 70°C ambient range and use a 3 V supply rail.
• System Memory Expansion — Can serve as parallel NAND memory for systems needing 64 Gbit density in a 100‑TBGA package footprint.

Unique Advantages

• High-density storage: 64 Gbit capacity in an 8G × 8 organization enables substantial non-volatile storage in a single device.
• Parallel interface compatibility: The parallel memory interface allows integration with legacy or parallel-host architectures.
• Compact TBGA package: 100‑TBGA (12×18) packaging provides a small board footprint for space-constrained designs.
• Broad supply range: 2.7 V to 3.6 V operation supports typical 3 V system power rails.
• Defined operating window: Specified 0°C to 70°C ambient rating clarifies environmental limits for design planning.

Why Choose MT29F64G08AKCBBH2-12:B TR?

The MT29F64G08AKCBBH2-12:B TR combines 64 Gbit NAND flash capacity with a parallel interface and compact 100‑TBGA packaging to address board-level designs that require dense non-volatile memory in a small footprint. Its supply voltage range and defined operating temperature make it straightforward to integrate into systems using standard 3 V rails and room-temperature environments.

This device is suited for designers and procurement teams seeking a verified NAND flash component with clear electrical and mechanical specifications for applications requiring parallel memory connectivity and high-density storage, offering predictable integration into existing board layouts.

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