MT29F64G08AJABAWP:B TR
| Part Description |
IC FLASH 64GBIT PAR 48TSOP I |
|---|---|
| Quantity | 937 Available (as of May 6, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 48-TSOP I | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 48-TFSOP (0.724", 18.40mm Width) | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 8G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F64G08AJABAWP:B TR – IC FLASH 64GBIT PAR 48TSOP I
The MT29F64G08AJABAWP:B TR is a 64 Gbit non-volatile NAND flash memory device with an 8G × 8 memory organization and a parallel memory interface. Packaged in a 48-TSOP I (48-TFSOP, 18.40 mm width) form factor, it is designed for applications requiring high-density, parallel flash storage operating from a 2.7 V to 3.6 V supply and an ambient temperature range of 0°C to 70°C.
Key Features
- Memory Type & Technology Non-volatile NAND flash providing persistent data storage in a FLASH memory format.
- Capacity & Organization 64 Gbit total capacity organized as 8G × 8 for byte-wide access and addressing.
- Interface Parallel memory interface for byte-oriented parallel connectivity.
- Supply Voltage Operates from 2.7 V to 3.6 V, accommodating common 3 V system rails.
- Package 48-TSOP I (48-TFSOP, 0.724" / 18.40 mm width) supplier device package for surface-mount integration.
- Operating Temperature Rated for 0°C to 70°C (TA) ambient operation.
Unique Advantages
- High-density storage: 64 Gbit capacity supports large data and code storage within a single device, reducing the need for multiple components.
- Byte-wide organization: 8G × 8 memory organization provides byte-oriented access compatible with parallel memory systems.
- Standard supply range: 2.7 V–3.6 V operation fits common 3 V system power rails for straightforward power integration.
- Compact surface-mount package: 48-TSOP I package allows integration into space-constrained PCB layouts while maintaining a standardized footprint.
- Non-volatile storage: FLASH NAND technology retains data without power, suitable for persistent code and data storage requirements.
Why Choose IC FLASH 64GBIT PAR 48TSOP I?
The MT29F64G08AJABAWP:B TR positions itself as a high-density parallel NAND flash option for designs that require 64 Gbit of non-volatile storage in a 48-TSOP I package. Its 8G × 8 organization, parallel interface, and 2.7 V–3.6 V operating range make it appropriate for systems that need byte-oriented parallel flash compatibility and standard 3 V power rails.
This device is suited to applications requiring a single-device flash solution with defined ambient operating limits (0°C to 70°C). It delivers a compact package option and straightforward electrical requirements for engineers specifying parallel NAND flash memory.
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