MT29F64G08AJABAWP-IT:B TR
| Part Description |
IC FLASH 64GBIT PAR 48TSOP I |
|---|---|
| Quantity | 134 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 48-TSOP I | Memory Format | FLASH | Technology | FLASH - NAND (SLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | 16 ns | Grade | Industrial | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | 20 ns | Packaging | 48-TFSOP (0.724", 18.40mm Width) | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 8G x 8 | ||
| Moisture Sensitivity Level | N/A | RoHS Compliance | Unknown | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | OBSOLETE | HTS Code | N/A |
Overview of MT29F64G08AJABAWP-IT:B TR – IC FLASH 64GBIT PAR 48TSOP I
The MT29F64G08AJABAWP-IT:B TR is a 64 Gbit non-volatile NAND flash memory device (SLC) manufactured by Micron Technology Inc. It is organized as 8G × 8 and implements a parallel memory interface in a 48-TSOP I / 48-TFSOP package.
Key electrical and timing characteristics provided include a 16 ns access time, 20 ns write cycle time (word/page), a supply voltage range of 2.7 V to 3.6 V, and an operating temperature range of −40°C to 85°C, making it suitable for designs that require parallel NAND flash with defined timing, voltage and thermal specifications.
Key Features
- Memory Type and Technology Non-volatile FLASH — NAND (SLC) technology providing single-level cell storage for the specified 64 Gbit capacity.
- Capacity and Organization 64 Gbit total capacity organized as 8G × 8 to match parallel byte-wide memory architectures.
- Performance Fast access time of 16 ns and a write cycle time (word/page) of 20 ns as specified.
- Interface Parallel memory interface for direct connection to parallel memory controllers or bus architectures.
- Voltage Supply Operates from 2.7 V to 3.6 V for compatibility with common system power rails.
- Package Available in a 48-TFSOP (0.724", 18.40 mm width) / 48-TSOP I footprint for PCB space planning and mechanical integration.
- Operating Temperature Specified operating range of −40°C to 85°C (TA).
Unique Advantages
- High-density storage: 64 Gbit capacity supports substantial non-volatile data storage within a single device.
- Deterministic timing: 16 ns access time and 20 ns write cycle time provide defined read/write timing for system integration and timing budgets.
- Flexible power compatibility: 2.7 V to 3.6 V supply range aligns with common system power domains.
- Temperature resilience: −40°C to 85°C rated operation enables deployment across temperature-variable environments.
- PCB footprint efficiency: 48-TSOP I / 48-TFSOP package with 18.40 mm width supports compact board layouts.
Why Choose IC FLASH 64GBIT PAR 48TSOP I?
The MT29F64G08AJABAWP-IT:B TR combines a 64 Gbit SLC NAND architecture with parallel interface timing (16 ns access, 20 ns write cycle) and a compact 48-TSOP I package, offering a clear specification set for systems that require non-volatile, parallel flash memory. Its defined voltage range (2.7–3.6 V) and −40°C to 85°C operating temperature make it suitable for designs that demand predictable electrical and thermal behavior.
This device is appropriate for engineering teams and procurement focused on integrating a specified parallel NAND flash component into their designs where capacity, timing, package footprint, and operating conditions are key selection criteria.
Request a quote or submit an inquiry to sales for pricing, lead time and availability for the MT29F64G08AJABAWP-IT:B TR.
