MT29F64G08AFAAAWP:A TR
| Part Description |
IC FLASH 64GBIT PAR 48TSOP I |
|---|---|
| Quantity | 540 Available (as of May 6, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 48-TSOP I | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 48-TFSOP (0.724", 18.40mm Width) | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 8G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F64G08AFAAAWP:A TR – IC FLASH 64GBIT PAR 48TSOP I
The MT29F64G08AFAAAWP:A TR is a 64 Gbit non-volatile NAND flash memory organized as 8G × 8 with a parallel memory interface. It is supplied in a 48-TSOP I (48-TFSOP) package and is provided as a FLASH memory format.
Key device constraints are a supply voltage range of 2.7 V to 3.6 V and an ambient operating temperature range of 0°C to 70°C. The part is specified for applications that require a 64 Gbit parallel NAND flash in a 48-TSOP I footprint.
Key Features
- Memory Type Non-volatile FLASH - NAND memory providing 64 Gbit capacity in an 8G × 8 organization.
- Interface Parallel memory interface for direct parallel bus integration.
- Voltage Supply Operates from 2.7 V to 3.6 V to support common 3.3 V systems and related power domains.
- Package 48-TFSOP (48-TSOP I) package with a 0.724" (18.40 mm) width, matching standard 48-TSOP I footprints.
- Operating Temperature Specified ambient range of 0°C to 70°C (TA).
- Memory Format FLASH memory format intended for non-volatile data storage.
Typical Applications
- Parallel NAND memory integration For designs that require a parallel-interface NAND flash device with 64 Gbit capacity.
- Onboard non-volatile storage Provides bulk FLASH storage where a 48-TSOP I packaged component is required.
- 3.3 V system designs Suitable for systems operating within a 2.7 V to 3.6 V supply window.
Unique Advantages
- High-density 64 Gbit capacity: Reduces the need for multiple devices by providing large single-device storage in an 8G × 8 organization.
- Parallel interface simplicity: Enables direct connection to parallel memory buses for straightforward integration.
- Flexible supply range: 2.7 V to 3.6 V operation supports common 3.3 V system rails.
- Standard 48-TSOP I package: Matches established board footprints (0.724" / 18.40 mm width) for compatible PCB layouts.
- Defined ambient range: 0°C to 70°C operating specification simplifies thermal planning for ambient applications.
Why Choose IC FLASH 64GBIT PAR 48TSOP I?
The MT29F64G08AFAAAWP:A TR provides a clear specification set for designers needing a 64 Gbit parallel NAND flash device in a 48-TSOP I package. With explicit electrical and mechanical parameters—memory organization, voltage range, package dimensions, and ambient operating range—this part fits designs that require straightforward selection and implementation of a high-density parallel FLASH component.
This device is suitable for projects where the listed capacity, parallel interface, supply voltage range, and package form factor are primary selection criteria, offering predictable integration into compatible PCBs and system power domains.
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