MT29F64G08AFAAAWP-ITZ:A TR

IC FLASH 64GBIT PAR 48TSOP I
Part Description

IC FLASH 64GBIT PAR 48TSOP I

Quantity 631 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusActive
Manufacturer Standard Lead Time4 Weeks
Datasheet

Specifications & Environmental

Device Package48-TSOP IMemory FormatFLASHTechnologyFLASH - NAND
Memory Size64 GbitAccess TimeN/AGradeIndustrial
Clock FrequencyN/AVoltage2.7V ~ 3.6VMemory TypeNon-Volatile
Operating Temperature-40°C ~ 85°C (TA)Write Cycle Time Word PageN/APackaging48-TFSOP (0.724", 18.40mm Width)
Mounting MethodNon-VolatileMemory InterfaceParallelMemory Organization8G x 8
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCN3A991B1AHTS Code8542.32.0071

Overview of MT29F64G08AFAAAWP-ITZ:A TR – 64 Gbit Parallel NAND Flash, 48‑TSOP I

The MT29F64G08AFAAAWP-ITZ:A TR is a 64 Gbit non-volatile NAND flash memory device in a parallel memory format. It is organized as 8G x 8 and provides high-density, removable storage in a 48‑TSOP I package.

Designed for systems that require parallel flash storage, the device supports a 2.7 V to 3.6 V supply range and an operating temperature range of −40°C to 85°C (TA), making it suitable for a range of embedded and industrial applications requiring reliable non-volatile memory.

Key Features

  • Memory Type & Technology Non-volatile FLASH NAND memory providing persistent data storage.
  • Capacity & Organization 64 Gbit capacity organized as 8G × 8 for high-density storage in a single device.
  • Interface Parallel memory interface for integration into systems that require parallel flash access.
  • Supply Voltage Wide supply voltage range of 2.7 V to 3.6 V to support common 3 V system domains.
  • Package 48‑TFSOP / 48‑TSOP I package (0.724", 18.40 mm width) for PCB-mounted implementations.
  • Operating Temperature Rated for −40°C to 85°C (TA), suitable for applications that require extended temperature operation.

Typical Applications

  • Embedded Storage — High-density parallel NAND for systems that require onboard non-volatile memory.
  • Firmware and Code Storage — Used to store firmware, boot code, or system images in devices that use parallel flash.
  • Industrial Systems — The −40°C to 85°C operating range and robust supply voltage range make it suitable for industrial controllers and equipment.
  • Data Logging — Large-capacity non-volatile storage for logging data in devices that support parallel memory interfaces.

Unique Advantages

  • Large 64 Gbit capacity: Provides significant non-volatile storage in a single device to reduce board-level component count.
  • Parallel interface compatibility: Integrates with systems designed for parallel flash access without requiring serial interface conversion.
  • Wide supply voltage: 2.7 V to 3.6 V tolerance enables use across common 3 V system domains.
  • Industrial temperature range: −40°C to 85°C rating supports deployment in temperature-challenging environments.
  • Compact TSOP package: 48‑TSOP I package offers a standard footprint for PCB-mounted flash integration.
  • Clear memory organization: 8G × 8 organization simplifies addressing and capacity planning for system designers.

Why Choose IC FLASH 64GBIT PAR 48TSOP I?

The MT29F64G08AFAAAWP-ITZ:A TR positions itself as a high-density parallel NAND flash option for designs that require reliable, non-volatile storage in a compact TSOP package. Its 64 Gbit capacity, 8G × 8 organization, and parallel interface make it a straightforward choice for systems already architected for parallel flash memory.

With a 2.7 V to 3.6 V supply range and an operating temperature span of −40°C to 85°C, the device is well suited to embedded and industrial designs seeking a balance of capacity and environmental tolerance while keeping board-level integration simple.

Request a quote or submit an inquiry to receive pricing and availability information for MT29F64G08AFAAAWP-ITZ:A TR and to discuss your design requirements with our team.

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