MT29F64G08AFAAAWP-ITZ:A
| Part Description |
IC FLASH 64GBIT PAR 48TSOP I |
|---|---|
| Quantity | 1,688 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 13 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 48-TSOP I | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 48-TFSOP (0.724", 18.40mm Width) | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 8G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F64G08AFAAAWP-ITZ:A – IC FLASH 64GBIT PAR 48TSOP I
The MT29F64G08AFAAAWP-ITZ:A is a 64 Gbit parallel NAND flash memory device from Micron Technology Inc. It uses NAND FLASH technology organized as 8G × 8 to provide non-volatile storage in a compact TSOP‑48 package.
Designed for systems that require parallel flash memory, the device supports a supply voltage range of 2.7 V to 3.6 V and an ambient operating temperature range of −40°C to 85°C, enabling integration into designs that accept a 48‑TSOP I footprint.
Key Features
- Memory Type & Technology Non-volatile NAND flash memory, 64 Gbit capacity, organized as 8G × 8.
- Interface Parallel memory interface for designs that use parallel NAND connectivity.
- Voltage Supply Operates from 2.7 V to 3.6 V for compatibility with common 3 V power rails.
- Operating Temperature Rated for −40°C to 85°C (TA) to support ambient-temperature designs.
- Package 48‑TFSOP / 48‑TSOP I package (0.724", 18.40 mm width) for board-level integration where a TSOP‑48 footprint is required.
- Memory Format & Organization FLASH memory format with 8G × 8 organization for high-density, byte-wide storage.
Typical Applications
- Non-volatile data storage Provides high-density flash storage for systems that require persistent data retention.
- Firmware and code storage Suitable for storing boot code, firmware images, and system software in devices using parallel NAND.
- Industrial equipment Supports deployments that require operation across an ambient range of −40°C to 85°C.
- Legacy parallel-NAND designs Fits designs and platforms that utilize a parallel NAND interface and TSOP‑48 package.
Unique Advantages
- High-density 64 Gbit capacity: Delivers substantial non-volatile storage in a single device to reduce part count.
- Parallel interface compatibility: Maintains compatibility with systems and controllers that use parallel NAND memory connections.
- Wide supply range: 2.7 V to 3.6 V operation provides flexibility for integration with common 3 V power domains.
- Broad operating temperature: Rated −40°C to 85°C to support ambient-temperature applications without additional temperature management.
- Standard TSOP‑48 package: Compact 48‑TFSOP/TSOP‑48 footprint eases PCB layout and replacement in existing designs.
Why Choose MT29F64G08AFAAAWP-ITZ:A?
The MT29F64G08AFAAAWP-ITZ:A delivers large-capacity, parallel NAND flash storage in a TSOP‑48 package with a broad supply and temperature range. Its 8G × 8 organization and 64 Gbit capacity suit designs that need byte-wide, high-density non-volatile memory while preserving board-level compatibility with parallel-NAND footprints.
This device is appropriate for designers specifying Micron NAND flash where a 48‑TSOP I form factor, 2.7 V–3.6 V operation, and −40°C to 85°C ambient performance are required, offering a straightforward integration path for systems that rely on parallel flash memory.
Request a quote or contact sales to discuss availability and pricing for the MT29F64G08AFAAAWP-ITZ:A.
