MT29F64G08AFAAAWP-IT:A
| Part Description |
IC FLASH 64GBIT PAR 48TSOP I |
|---|---|
| Quantity | 392 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 48-TSOP I | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 48-TFSOP (0.724", 18.40mm Width) | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 8G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F64G08AFAAAWP-IT:A – IC FLASH 64GBIT PAR 48TSOP I
The MT29F64G08AFAAAWP-IT:A is a 64 Gbit non-volatile FLASH memory device based on NAND technology with an 8G × 8 memory organization and a parallel memory interface. It is supplied in a 48-TSOP I package and operates from 2.7 V to 3.6 V.
This device is specified for an ambient operating temperature range of -40°C to 85°C and is packaged in a 48-TFSOP (0.724", 18.40 mm width) footprint for board-level integration.
Key Features
- Memory Technology Non-volatile FLASH − NAND architecture providing 64 Gbit storage capacity.
- Memory Organization Organized as 8G × 8 for straightforward byte-oriented access in parallel systems.
- Interface Parallel memory interface for systems that use parallel NAND connectivity.
- Voltage Supply Operates from 2.7 V to 3.6 V to match common 3 V power domains.
- Package 48-TSOP I / 48-TFSOP package (0.724", 18.40 mm width) for surface-mount board implementation.
- Operating Temperature Specified for -40°C to 85°C (TA) to support extended ambient conditions.
Unique Advantages
- High-density storage: 64 Gbit capacity enables substantial non-volatile data or code storage in a single device.
- Byte-oriented organization: 8G × 8 organization supports byte-wide data access patterns common in parallel memory designs.
- Flexible power compatibility: 2.7 V–3.6 V supply range accommodates a variety of 3 V system power architectures.
- Extended temperature support: -40°C to 85°C rating addresses temperature-tolerant application requirements.
- Board-level package: 48-TSOP I (48-TFSOP) package provides a compact, industry-standard footprint for surface-mount integration.
Why Choose IC FLASH 64GBIT PAR 48TSOP I?
IC FLASH 64GBIT PAR 48TSOP I (MT29F64G08AFAAAWP-IT:A) combines 64 Gbit NAND flash density with a parallel interface and a 48-TSOP I package, offering a clear specification set for designs that require large non-volatile memory capacity in a board-mount form factor. The device’s 2.7 V–3.6 V supply range and -40°C to 85°C operating window make it suitable for systems that need straightforward power integration and extended ambient tolerance.
Manufactured by Micron Technology Inc., this part is appropriate for designs that specifically require a 64 Gbit parallel NAND flash device in a TSOP I package and value the documented electrical and mechanical specifications provided.
Request a quote or contact sales for pricing and availability of MT29F64G08AFAAAWP-IT:A.
