MT29F64G08AEEDBJ4-12:D
| Part Description |
IC FLASH 64GBIT PAR 132VBGA |
|---|---|
| Quantity | 1,646 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 132-VBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 83 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 132-VBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 8G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | OBSOLETE | HTS Code | 0000.00.0000 |
Overview of MT29F64G08AEEDBJ4-12:D – IC FLASH 64GBIT PAR 132VBGA
The MT29F64G08AEEDBJ4-12:D is a 64 Gbit non-volatile FLASH memory device based on NAND technology with an 8G × 8 memory organization. It provides parallel memory interfacing in a 132-VBGA (12×18) package and operates from a 2.7 V to 3.6 V supply.
Because its key electrical and mechanical attributes are documented—capacity, organization, parallel interface, clock frequency, supply voltage and operating temperature—this device is specified for designs that require a parallel NAND flash memory solution in a compact BGA footprint.
Key Features
- Memory Capacity and Organization 64 Gbit total capacity arranged as 8G × 8, enabling large non-volatile storage in a single device.
- Technology NAND flash non-volatile memory providing persistent data retention without power.
- Interface and Performance Parallel memory interface with a clock frequency of 83 MHz for synchronous parallel operation.
- Power Wide supply range from 2.7 V to 3.6 V to accommodate common 3 V system rails.
- Package 132-VBGA package (12 × 18 mm) offering a compact BGA form factor for board-level integration.
- Operating Temperature Rated for 0°C to 70°C ambient (TA), suitable for standard commercial temperature environments.
Unique Advantages
- High-density storage: 64 Gbit capacity in an 8G × 8 organization provides substantial non-volatile storage in a single device.
- Parallel interface throughput: 83 MHz clock frequency with a parallel interface supports designs that require synchronous parallel flash access.
- Standard 3 V supply compatibility: 2.7 V–3.6 V supply range aligns with common 3.3 V and 3.0 V system rails for straightforward power integration.
- Compact BGA packaging: 132-VBGA (12×18) package reduces board area while providing a robust ball-grid mounting option.
- Commercial temperature rating: 0°C–70°C operating range meets typical commercial application environment requirements.
Why Choose IC FLASH 64GBIT PAR 132VBGA?
The MT29F64G08AEEDBJ4-12:D positions itself as a high-capacity parallel NAND flash component with clear, verifiable electrical and mechanical specifications. Its combination of 64 Gbit density, parallel interface at 83 MHz, and a compact 132-VBGA package makes it suitable for designs that require substantial non-volatile storage in a space-efficient form factor while operating from standard 3 V rails.
This device is appropriate for customers specifying parallel NAND flash with defined supply and temperature limits and who require an explicit package footprint for board-level planning. Its documented specs support straightforward integration decisions around capacity, interface timing, power, and thermal environment.
Request a quote or contact sales to discuss pricing, lead times and availability for the MT29F64G08AEEDBJ4-12:D.
