MT29F64G08AECDBJ4-6IT:D
| Part Description |
IC FLASH 64GBIT PAR 132VBGA |
|---|---|
| Quantity | 159 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 132-VBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 166 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 132-VBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 8G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F64G08AECDBJ4-6IT:D – IC FLASH 64GBIT PAR 132VBGA
The MT29F64G08AECDBJ4-6IT:D is a 64 Gbit parallel NAND flash memory device based on non-volatile FLASH technology with an 8G × 8 memory organization. It provides parallel memory interface access with a documented clock frequency of 166 MHz and operates from a 2.7 V to 3.6 V supply.
This device is offered in a compact 132-VBGA (12 × 18) package and supports an ambient temperature range of −40°C to 85°C, targeting designs that require high-density parallel NAND storage in a small package footprint.
Key Features
- Memory Type & Technology Non-volatile FLASH NAND memory providing persistent storage with a 64 Gbit capacity.
- Memory Organization 8G × 8 organization for byte-wide parallel data access.
- Interface & Performance Parallel memory interface with a clock frequency of 166 MHz for synchronized access.
- Voltage Supply Operates from 2.7 V to 3.6 V, allowing compatibility with common 3.3 V systems.
- Package & Mounting 132-VBGA (12 × 18) package suitable for surface-mount PCB assembly.
- Temperature Range Specified operating ambient range of −40°C to 85°C.
Typical Applications
- Parallel flash memory systems — Used where a parallel NAND FLASH device with 8-bit organization and 64 Gbit capacity is required for bulk non-volatile storage.
- Embedded and industrial equipment — The −40°C to 85°C operating range supports deployment in environments that demand extended temperature operation.
- Compact PCB designs — The 132-VBGA (12 × 18) package provides a high-density footprint for space-constrained board layouts.
Unique Advantages
- High-density storage: 64 Gbit capacity enables large non-volatile data storage within a single device footprint.
- Byte-wide parallel access: 8G × 8 organization and parallel interface simplify integration into systems designed for byte-oriented NAND access.
- Defined clock performance: Specified 166 MHz clock frequency supports deterministic timing for system designers.
- Wide supply voltage range: 2.7 V to 3.6 V operation provides flexibility across common 3.3 V platforms.
- Thermal robustness: −40°C to 85°C operating specification supports a range of ambient operating conditions.
- Compact VBGA package: 132-VBGA (12 × 18) aids in minimizing PCB area while delivering high capacity.
Why Choose MT29F64G08AECDBJ4-6IT:D?
The MT29F64G08AECDBJ4-6IT:D delivers a balance of high-density NAND FLASH capacity, a byte-wide parallel interface, and defined electrical and thermal specifications. Its 64 Gbit capacity, 166 MHz clocking, and 2.7 V–3.6 V supply range make it suitable for designs that require compact, persistent storage with predictable electrical characteristics.
Designed and manufactured by Micron Technology Inc., this device is appropriate for engineers specifying parallel NAND flash in space-constrained assemblies that require operation across a −40°C to 85°C ambient range.
Request a quote or contact sales to discuss availability, lead times, and how this parallel 64 Gbit NAND FLASH device can be integrated into your next design.
