MT29F64G08AECDBJ4-6:D
| Part Description |
IC FLASH 64GBIT PAR 132VBGA |
|---|---|
| Quantity | 54 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 132-VBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 166 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 132-VBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 8G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F64G08AECDBJ4-6:D – IC FLASH 64GBIT PAR 132VBGA
The MT29F64G08AECDBJ4-6:D is a 64 Gbit non-volatile NAND flash memory device provided in a 132-VBGA (12×18) package. It is organized as 8G × 8 and uses a parallel memory interface with a specified clock frequency of 166 MHz.
This device is intended for designs requiring high-density parallel NAND flash storage with a compact BGA footprint and single-supply operation across 2.7 V to 3.6 V. The operating ambient temperature range is 0°C–70°C.
Key Features
- Memory: 64 Gbit capacity, organized as 8G × 8, providing high-density non-volatile storage in a single device.
- Technology: FLASH - NAND non-volatile memory technology for persistent data and code storage.
- Interface & Performance: Parallel memory interface with a clock frequency of 166 MHz for bus-timed access.
- Voltage Supply: Single-supply operation from 2.7 V to 3.6 V to match common 3 V system rails.
- Package: 132-VBGA (12×18) supplier device package for compact board-level integration.
- Operating Temperature: Specified ambient range of 0°C–70°C (TA) for standard temperature applications.
Typical Applications
- Parallel flash storage implementations: Use where a parallel NAND flash device is required for board-level memory capacity.
- Firmware and code storage: Suitable for storing system firmware or boot code in designs that use parallel flash.
- Memory expansion on compact PCBs: Provides 64 Gbit density in a 132-VBGA footprint for space-constrained board layouts.
Unique Advantages
- High-density capacity: 64 Gbit organization (8G × 8) reduces the number of devices needed for large storage requirements.
- Parallel interface with defined clock rate: 166 MHz clock specification supports predictable timing for parallel-access designs.
- Wide supply voltage compatibility: 2.7 V–3.6 V operation aligns with common 3 V system rails and simplifies power design.
- Compact BGA package: 132-VBGA (12×18) package enables board-level integration where PCB area is limited.
- Standard ambient temperature rating: 0°C–70°C operating range for typical commercial-temperature applications.
Why Choose MT29F64G08AECDBJ4-6:D?
The MT29F64G08AECDBJ4-6:D positions itself as a high-density parallel NAND flash option that combines 64 Gbit capacity with a compact 132-VBGA footprint and a 166 MHz clock specification. Its 2.7 V–3.6 V supply range and 0°C–70°C operating window make it a practical choice for systems targeting commercial-temperature environments requiring persistent memory.
This device is suited to designs that need board-level, parallel-access flash for firmware, code, or bulk non-volatile storage and where a compact package and standard 3 V supply compatibility are important design considerations.
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