MT29F64G08AECABH1-10Z:A TR
| Part Description |
IC FLASH 64GBIT PARALLEL 100VBGA |
|---|---|
| Quantity | 118 Available (as of May 6, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 100-VBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 100 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 100-VBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 8G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F64G08AECABH1-10Z:A TR – IC FLASH 64GBIT PARALLEL 100VBGA
The MT29F64G08AECABH1-10Z:A TR is a 64 Gbit parallel NAND flash memory device using Flash NAND technology with an 8G x 8 organization. It provides non-volatile on-board storage in a 100-ball VBGA (12×18) package and supports both asynchronous and synchronous I/O modes.
This device targets system designs that require high-density, parallel NAND storage with ONFI 2.2-compliant interfaces, offering synchronous timing modes, defined program/erase characteristics and a commercial operating temperature range for general embedded applications.
Key Features
- Memory Architecture 64 Gbit NAND flash organized as 8G x 8 with page size (x8) of 8,640 bytes (8192 + 448) and block size of 128 pages.
- ONFI and Cell Technology Open NAND Flash Interface (ONFI) 2.2-compliant and single-level cell (SLC) technology as specified in the device family documentation.
- Synchronous and Asynchronous I/O Supports synchronous I/O up to synchronous timing mode 5 and asynchronous I/O up to timing mode 5, with data strobe (DQS) support for synchronous data alignment.
- Performance Metrics Clock frequency specified at 100 MHz; synchronous read/write throughput per pin up to 200 MT/s (DDR), asynchronous throughput per pin up to 50 MT/s, with typical array timings: read page 35 μs, program page 350 μs, erase block 1.5 ms.
- Power and Voltage Operating voltage range VCC: 2.7–3.6 V with VCCQ options noted in device documentation.
- Endurance and Data Retention Device family specifies endurance of 60,000 program/erase cycles and data retention compliant with JESD47G as documented.
- Package and Temperature 100-ball BGA package (100-VBGA, 12×18) and commercial operating temperature range 0°C to +70°C (TA).
- Advanced Command Support Includes program cache, read cache (sequential and random), multi-plane commands, copyback, OTP mode and read unique ID as documented.
Typical Applications
- Parallel on-board storage for embedded systems Provides non-volatile bulk storage in systems that use a parallel NAND interface for firmware, file systems or data logging.
- System boot and firmware storage Suitable for storing boot code and firmware images that require non-volatile, block-erasable memory in a compact BGA package.
- High-density data storage modules Used where a 64 Gbit NAND device in a 100-VBGA footprint is needed to meet board space and capacity requirements.
Unique Advantages
- ONFI 2.2 compliance: Ensures compatibility with ONFI-compliant controllers and a standardized NAND flash command set and timing.
- SLC technology: Single-level cell design and documented endurance (60,000 program/erase cycles) support robust program/erase lifetime expectations.
- Flexible I/O modes: Both synchronous (with DQS) and asynchronous modes are supported to match system timing and throughput needs.
- Defined array performance: Manufacturer-provided typical timings for read, program and erase enable predictable system-level performance planning.
- Compact BGA footprint: 100-ball VBGA (12×18) package provides high capacity in a small board area for space-constrained designs.
- Wide operating voltage range: 2.7–3.6 V supply simplifies integration with common 3.3 V system rails.
Why Choose IC FLASH 64GBIT PARALLEL 100VBGA?
The MT29F64G08AECABH1-10Z:A TR delivers a validated 64 Gbit parallel NAND flash option with ONFI 2.2 compliance, SLC cell technology and documented performance and endurance metrics. Its combination of synchronous/asynchronous I/O flexibility, defined array timings, and a compact 100-ball VBGA package makes it suitable for embedded designs requiring predictable NAND behavior and high-density non-volatile storage.
This device is appropriate for engineers specifying parallel NAND for firmware, system storage or module integration where commercial temperature range and 2.7–3.6 V operation align with system requirements. The device family documentation provides the detailed command set, timing modes and reliability parameters needed for long-term integration and system qualification.
Request a quote or submit a request for pricing and availability to evaluate MT29F64G08AECABH1-10Z:A TR for your design needs.