MT29F64G08AECABH1-10Z:A TR

IC FLASH 64GBIT PARALLEL 100VBGA
Part Description

IC FLASH 64GBIT PARALLEL 100VBGA

Quantity 118 Available (as of May 6, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package100-VBGA (12x18)Memory FormatFLASHTechnologyFLASH - NAND
Memory Size64 GbitAccess TimeN/AGradeCommercial
Clock Frequency100 MHzVoltage2.7V ~ 3.6VMemory TypeNon-Volatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word PageN/APackaging100-VBGA
Mounting MethodNon-VolatileMemory InterfaceParallelMemory Organization8G x 8
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS CompliantREACH ComplianceREACH Unaffected
QualificationN/AECCN3A991B1AHTS Code8542.32.0071

Overview of MT29F64G08AECABH1-10Z:A TR – IC FLASH 64GBIT PARALLEL 100VBGA

The MT29F64G08AECABH1-10Z:A TR is a 64 Gbit parallel NAND flash memory device using Flash NAND technology with an 8G x 8 organization. It provides non-volatile on-board storage in a 100-ball VBGA (12×18) package and supports both asynchronous and synchronous I/O modes.

This device targets system designs that require high-density, parallel NAND storage with ONFI 2.2-compliant interfaces, offering synchronous timing modes, defined program/erase characteristics and a commercial operating temperature range for general embedded applications.

Key Features

  • Memory Architecture 64 Gbit NAND flash organized as 8G x 8 with page size (x8) of 8,640 bytes (8192 + 448) and block size of 128 pages.
  • ONFI and Cell Technology Open NAND Flash Interface (ONFI) 2.2-compliant and single-level cell (SLC) technology as specified in the device family documentation.
  • Synchronous and Asynchronous I/O Supports synchronous I/O up to synchronous timing mode 5 and asynchronous I/O up to timing mode 5, with data strobe (DQS) support for synchronous data alignment.
  • Performance Metrics Clock frequency specified at 100 MHz; synchronous read/write throughput per pin up to 200 MT/s (DDR), asynchronous throughput per pin up to 50 MT/s, with typical array timings: read page 35 μs, program page 350 μs, erase block 1.5 ms.
  • Power and Voltage Operating voltage range VCC: 2.7–3.6 V with VCCQ options noted in device documentation.
  • Endurance and Data Retention Device family specifies endurance of 60,000 program/erase cycles and data retention compliant with JESD47G as documented.
  • Package and Temperature 100-ball BGA package (100-VBGA, 12×18) and commercial operating temperature range 0°C to +70°C (TA).
  • Advanced Command Support Includes program cache, read cache (sequential and random), multi-plane commands, copyback, OTP mode and read unique ID as documented.

Typical Applications

  • Parallel on-board storage for embedded systems Provides non-volatile bulk storage in systems that use a parallel NAND interface for firmware, file systems or data logging.
  • System boot and firmware storage Suitable for storing boot code and firmware images that require non-volatile, block-erasable memory in a compact BGA package.
  • High-density data storage modules Used where a 64 Gbit NAND device in a 100-VBGA footprint is needed to meet board space and capacity requirements.

Unique Advantages

  • ONFI 2.2 compliance: Ensures compatibility with ONFI-compliant controllers and a standardized NAND flash command set and timing.
  • SLC technology: Single-level cell design and documented endurance (60,000 program/erase cycles) support robust program/erase lifetime expectations.
  • Flexible I/O modes: Both synchronous (with DQS) and asynchronous modes are supported to match system timing and throughput needs.
  • Defined array performance: Manufacturer-provided typical timings for read, program and erase enable predictable system-level performance planning.
  • Compact BGA footprint: 100-ball VBGA (12×18) package provides high capacity in a small board area for space-constrained designs.
  • Wide operating voltage range: 2.7–3.6 V supply simplifies integration with common 3.3 V system rails.

Why Choose IC FLASH 64GBIT PARALLEL 100VBGA?

The MT29F64G08AECABH1-10Z:A TR delivers a validated 64 Gbit parallel NAND flash option with ONFI 2.2 compliance, SLC cell technology and documented performance and endurance metrics. Its combination of synchronous/asynchronous I/O flexibility, defined array timings, and a compact 100-ball VBGA package makes it suitable for embedded designs requiring predictable NAND behavior and high-density non-volatile storage.

This device is appropriate for engineers specifying parallel NAND for firmware, system storage or module integration where commercial temperature range and 2.7–3.6 V operation align with system requirements. The device family documentation provides the detailed command set, timing modes and reliability parameters needed for long-term integration and system qualification.

Request a quote or submit a request for pricing and availability to evaluate MT29F64G08AECABH1-10Z:A TR for your design needs.

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