MT29F64G08AECABH1-10IT:A TR
| Part Description |
IC FLASH 64GBIT PARALLEL 100VBGA |
|---|---|
| Quantity | 588 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 100-VBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 100 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 100-VBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 8G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F64G08AECABH1-10IT:A TR – IC FLASH 64GBIT PARALLEL 100VBGA
The MT29F64G08AECABH1-10IT:A TR is a 64 Gbit parallel NAND flash memory device using single-level cell (SLC) technology and organized as 8G × 8. The device supports both asynchronous and synchronous I/O modes and implements ONFI 2.2‑compliant features for parallel NAND operation.
This part is designed for board‑level integration in a 100‑VBGA (12 × 18) package and supports industrial operating temperatures (‑40°C to +85°C) with a supply voltage range of 2.7 V to 3.6 V. It is suited to applications that require non‑volatile parallel NAND storage with robust endurance and explicit array control features.
Key Features
- Core & Architecture Single‑level cell (SLC) NAND flash with device organization of 8G × 8 and a 64 Gbit device size.
- Memory Organization Page size x8: 8,640 bytes (8,192 + 448 bytes); block size: 128 pages; plane architecture with device block counts consistent with the 64Gb density.
- Interface & Protocol Parallel NAND interface with ONFI 2.2 compliance and support for asynchronous and synchronous I/O timing modes, including DQS data‑strobe signals for synchronous data synchronization.
- Performance Synchronous I/O read/write throughput per pin up to 200 MT/s and asynchronous throughput per pin up to 50 MT/s as defined for the device family; clocking and timing modes support high‑speed synchronous operation.
- Power & Voltage Operating VCC range of 2.7 V to 3.6 V and support for VCCQ voltage selections as specified in the device family documentation.
- Package & Mounting 100‑ball BGA (100‑VBGA) package, supplier device package specified as 100‑VBGA (12 × 18) for compact board integration.
- Temperature & Reliability Industrial operating temperature range of ‑40°C to +85°C; endurance rated at 60,000 program/erase cycles and data retention qualified to JESD47G as indicated in the device family documentation.
- Advanced Command Set & Array Features Supports program cache, read cache (sequential and random), multi‑plane commands, multi‑LUN operations, copyback, OTP mode, and read unique ID operations for flexible flash management.
Typical Applications
- Industrial systems — Non‑volatile parallel NAND storage for controllers and equipment that require operation across an industrial temperature range (‑40°C to +85°C).
- Embedded storage — On‑board flash memory for embedded platforms that need parallel NAND with SLC endurance characteristics and block/page architecture for managed storage.
- Custom hardware controllers — Board‑level integration in systems using a 100‑VBGA footprint and parallel NAND interface for direct array access and advanced command support.
Unique Advantages
- Industrial temperature rating: The device supports ‑40°C to +85°C operation, enabling deployment in temperature‑sensitive environments.
- SLC endurance: Endurance of 60,000 program/erase cycles provides a predictable lifecycle for write‑intensive applications.
- Flexible I/O modes: ONFI 2.2 compliance and support for synchronous/asynchronous modes with DQS strobe enable accurate timing and improved data throughput in synchronous operation.
- Large page and block architecture: 8,640‑byte pages and 128‑page blocks help optimize sequential transfers and block management for high‑capacity storage.
- Compact BGA package: 100‑VBGA (12 × 18) package provides a small board footprint for high‑density designs.
- Comprehensive command feature set: Program/read caches, multi‑plane and multi‑LUN commands, and copyback operations support efficient flash management and parallelism.
Why Choose MT29F64G08AECABH1-10IT:A TR?
The MT29F64G08AECABH1-10IT:A TR delivers a parallel SLC NAND solution that combines industrial temperature capability, proven endurance, and advanced ONFI‑compliant features for controlled, high‑throughput flash operation. Its 64 Gbit density, large page/block geometry, and 100‑VBGA package make it suitable for embedded and industrial board‑level storage applications where predictable lifecycle and explicit NAND control are required.
This device is a fit for designers and systems integrators needing parallel NAND memory with explicit array and command support, industrial thermal range, and a compact BGA footprint for integration into custom hardware and embedded platforms.
Request a quote or contact sales to discuss availability, lead times, and pricing for MT29F64G08AECABH1-10IT:A TR.
