MT29F64G08AECABH1-10IT:A

The MT29F64G08AECABH1-10IT:A is a 64 Gbit non-volatile NAND flash memory device from Micron Technology Inc., organized as 8G × 8 in a parallel interface. It implements NAND FLASH technology with single-level cell (SLC) architecture and supports both asynchronous and synchronous I/O modes.

This device is designed for designs that require high-density parallel NAND storage with robust endurance and a compact 100-ball VBGA package. Key electrical and timing characteristics include a 2.7–3.6 V supply range and a 100 MHz clock rate for synchronous operation.

Key Features

• Memory Technology  NAND Flash (SLC). Single-level cell architecture as specified in the datasheet for the device family.
• Density & Organization  64 Gbit total capacity, organized as 8G × 8. Device-level organization specifies 8192 blocks for the 64Gb density.
• Interface & Protocol  Parallel memory interface with ONFI 2.2-compliant features and support for both asynchronous and synchronous I/O modes. Includes DQS data strobe support for synchronous data synchronization and multi-plane/multi-LUN command support.
• Performance  Synchronous operation supports high-rate transfers (read/write throughput per pin up to 200 MT/s in synchronous mode); asynchronous throughput up to 50 MT/s. Reported array timings include read page (max 35 μs), program page (typical 350 μs) and erase block (typical 1.5 ms).
• Clock & Timing  Clock frequency specified at 100 MHz; synchronous timing modes supported up to mode 5 as defined in the product documentation.
• Power  Operating VCC: 2.7–3.6 V. VCCQ options documented in the device family include 1.7–1.95 V or 2.7–3.6 V operation.
• Endurance & Data Reliability  Endurance rating of 60,000 program/erase cycles and data retention meeting JESD47G compliance as noted in the datasheet.
• Package & Temperature  100-ball VBGA package (12 × 18 mm footprint) and industrial operating temperature range of –40 °C to +85 °C (TA).

Unique Advantages

• High-density SLC storage in a compact package: 64 Gbit capacity in a 100-ball VBGA (12×18) allows high storage density with a small board footprint.
• Flexible I/O operation: Support for both asynchronous and synchronous modes, including DQS strobe signals, enables designers to choose the timing model that matches system requirements.
• ONFI 2.2 compatibility: ONFI-compliant features simplify integration with host controllers that support the ONFI protocol family.
• Predictable array performance: Documented read, program and erase latencies provide clear parameters for system-level performance budgeting.
• Industrial temperature range and robust endurance: –40 °C to +85 °C operation and 60,000 program/erase cycles provide stability for temperature-variable environments and long-term use cases.

Why Choose MT29F64G08AECABH1-10IT:A?

The MT29F64G08AECABH1-10IT:A combines high-density SLC NAND storage, flexible synchronous/asynchronous interfaces, and documented endurance and timing characteristics to serve designs that require reliable, compact non-volatile memory. Its 100-ball VBGA package and industrial temperature rating make it suitable where board space and environmental range are key considerations.

This Micron NAND device is suited to engineers specifying deterministic read/program/erase parameters, ONFI-compatible interfaces, and established endurance/retention metrics. It offers a clear technical profile for integration, long-term use, and system-level performance planning.

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