MT29F64G08AECABH1-10ITZ:A TR
| Part Description |
IC FLASH 64GBIT PARALLEL 100VBGA |
|---|---|
| Quantity | 696 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 4 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 100-VBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 100 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 100-VBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 8G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F64G08AECABH1-10ITZ:A TR – IC FLASH 64GBIT PARALLEL 100VBGA
The MT29F64G08AECABH1-10ITZ:A TR is a 64 Gbit non-volatile NAND flash memory device in a 100-ball VBGA package. It implements NAND flash architecture with an 8G × 8 memory organization and supports parallel memory interface options suitable for embedded and industrial systems.
Designed for applications requiring high-density storage with robust endurance and a wide operating voltage and temperature window, this device offers advanced NAND command features and synchronous/asynchronous I/O modes for flexible system integration.
Key Features
- Memory Type & Capacity 64 Gbit non-volatile NAND flash organized as 8G × 8.
- Interface & Performance Parallel memory interface with support for asynchronous and synchronous I/O; synchronous modes up to mode 5 and asynchronous modes up to mode 5 per the datasheet.
- Clock & Throughput Specified clock frequency 100 MHz. Datasheet synchronous performance notes include DDR operation (10 ns) and read/write throughput per pin up to 200 MT/s; asynchronous throughput per pin up to 50 MT/s.
- Memory Organization & Erase/Program Metrics Page size (×8): 8,640 bytes (8,192 + 448). Block size: 128 pages. Typical program page and erase times are provided in the device documentation (program page typ. 350 µs, erase block typ. 1.5 ms; read page max. 35 µs as listed).
- Advanced Command Set ONFI 2.2-compliant command support with program cache, read cache (sequential and random), OTP mode, multi-plane commands, multi-LUN operations, copyback, and read unique ID.
- Reliability & Endurance Endurance rated at 60,000 program/erase cycles with data retention and qualification notes referenced to JESD47G in the datasheet.
- Operating Conditions Operating voltage range VCC: 2.7–3.6 V; additional VCCQ options noted in the datasheet. Industrial operating temperature range: –40°C to +85°C (TA).
- Package 100-ball VBGA package (100-VBGA, 12 × 18 outline) for compact board-level integration.
- Startup/Reset Behavior RESET (FFh) is required as the first command after power-on; operation status byte provides software methods for completion and pass/fail detection, write-protect status, and other status indicators.
Typical Applications
- Industrial embedded systems Non-volatile high-density storage and code/data retention in equipment that requires industrial temperature operation (–40°C to +85°C).
- High-density data modules Storage subsystems and modules that require 64 Gbit capacity in a compact 100-ball VBGA package for board-level integration.
- Firmware and code storage Program and read cache features, OTP mode, and robust program/erase endurance make the device suitable for storing firmware and application code.
Unique Advantages
- High-density, compact footprint: 64 Gbit capacity in a 100-VBGA (12×18) package minimizes PCB area for storage-rich designs.
- Flexible I/O modes: Supports both asynchronous and synchronous I/O (including ONFI 2.2 features) to match system timing and throughput requirements.
- Robust operating range: Wide VCC range (2.7–3.6 V) and industrial temperature rating (–40°C to +85°C) enable deployment in varied environments.
- Advanced NAND features: Built-in program/read cache operations, multi-plane and multi-LUN commands, and copyback simplify high-performance data management and parallel operations.
- Documented endurance and reliability: 60,000 program/erase cycle endurance and data-retention references (JESD47G) support longevity planning and system-level reliability strategies.
Why Choose IC FLASH 64GBIT PARALLEL 100VBGA?
The MT29F64G08AECABH1-10ITZ:A TR provides a high-density, industrial-temperature NAND flash option with a compact 100-ball VBGA package and a proven set of NAND command capabilities. Its combination of synchronous/asynchronous modes, ONFI 2.2 features, and documented endurance makes it suitable for embedded designs that require reliable non-volatile storage and flexible performance scaling.
This device is well suited to engineers designing storage modules, firmware storage solutions, and industrial embedded systems that need verified program/erase endurance, a broad operating voltage window, and support for advanced NAND operations documented in the product datasheet.
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