MT29F64G08AECABH1-10ITZ:A

The MT29F64G08AECABH1-10ITZ:A is a 64 Gbit non-volatile NAND flash memory device in a 100-ball VBGA (12×18) package. It implements NAND FLASH technology with an 8G × 8 memory organization and a parallel memory interface targeted for embedded storage applications.

This device offers synchronous and asynchronous NAND operation modes, a 100 MHz clock frequency rating, and an operating voltage range of 2.7 V to 3.6 V. It supports industrial temperature operation from −40°C to +85°C and is part of a family that includes 32Gb, 64Gb, 128Gb and 256Gb densities.

Key Features

• Memory Technology  NAND FLASH, single-level cell (SLC) technology with a 64 Gbit density and an organization of 8G × 8.
• Interface and Protocol  Parallel memory interface with support for ONFI 2.2-compliant command set and NAND Flash protocol features described in the device family documentation.
• Performance  Synchronous I/O operation (up to synchronous timing mode 5) and asynchronous I/O operation (up to timing mode 5); documented read/write throughputs per pin of 200 MT/s (synchronous) and 50 MT/s (asynchronous).
• Array Operation Times  Array-level timings include typical read page time of 35 μs, typical program page time of 350 μs, and typical erase block time of 1.5 ms as specified for the device family.
• Endurance and Data Retention  Specified endurance of 60,000 program/erase cycles and data retention compliant with JESD47G as noted in the device documentation.
• Power  Operating voltage range VCC: 2.7 V to 3.6 V with VCCQ options documented in the device family specification.
• Package and Temperature  100-ball BGA (100-VBGA, 12×18) package; industrial operating temperature range −40°C to +85°C.
• Advanced Command Support  Device family supports program cache, read cache (sequential and random), multi-plane commands, multi-LUN operations, copyback, and one-time programmable (OTP) mode as described in the datasheet.

Typical Applications

• Embedded Storage  Parallel NAND flash storage in embedded systems requiring 64 Gbit non-volatile memory capacity and SLC endurance characteristics.
• Industrial Controllers  Industrial-grade applications that require wide operating temperature support (−40°C to +85°C) and high program/erase endurance.
• Data Logging and Local Archive  Local non-volatile data storage where block/plane operations, program/erase endurance, and documented array timings are important.

Unique Advantages

• High-density 64 Gbit capacity: Provides significant non-volatile storage in a compact BGA footprint for space-constrained designs.
• Flexible interface modes: Supports both synchronous and asynchronous modes with ONFI 2.2 protocol features for integration with a variety of memory controllers.
• Documented array performance: Published read, program and erase timings (35 μs read page, 350 μs program page, 1.5 ms erase block) help designers budget performance and latency.
• Industrial temperature rating: −40°C to +85°C operation enables deployment in temperature-demanding environments.
• Endurance and reliability: 60,000 program/erase cycles and JESD47G-compliant data retention provide a predictable lifecycle for system design.
• Compact BGA package: 100-ball VBGA (12×18) package delivers high density and a small board footprint for embedded applications.

Why Choose MT29F64G08AECABH1-10ITZ:A?

The MT29F64G08AECABH1-10ITZ:A is positioned for engineers who need a documented, high-density SLC NAND flash device with both synchronous and asynchronous operation modes, a parallel interface, and industrial temperature capability. Its published array timings, endurance specification, and ONFI-compliant command set make it suitable for embedded storage designs that require predictable performance and lifecycle characteristics.

As part of a family that includes 32Gb through 256Gb densities, this device supports scalability across density requirements while retaining common feature sets and command behavior, simplifying design reuse and qualification within a product line.

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