MT29F64G08AECABH1-10:A

IC FLASH 64GBIT PARALLEL 100VBGA
Part Description

IC FLASH 64GBIT PARALLEL 100VBGA

Quantity 478 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package100-VBGA (12x18)Memory FormatFLASHTechnologyFLASH - NAND
Memory Size64 GbitAccess TimeN/AGradeCommercial
Clock Frequency100 MHzVoltage2.7V ~ 3.6VMemory TypeNon-Volatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word PageN/APackaging100-VBGA
Mounting MethodNon-VolatileMemory InterfaceParallelMemory Organization8G x 8
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unknown
QualificationN/AECCN3A991B1AHTS Code8542.32.0071

Overview of MT29F64G08AECABH1-10:A – IC FLASH 64GBIT PARALLEL 100VBGA

The MT29F64G08AECABH1-10:A is a 64 Gbit parallel NAND flash memory device in a 100-ball VBGA (12 × 18) package. It implements SLC NAND architecture and supports both asynchronous and synchronous I/O modes with ONFI 2.2 compliance.

Designed as non-volatile storage, the device targets systems that require parallel NAND flash with defined operating conditions (VCC 2.7–3.6V, TA 0°C to 70°C) and features that support high-throughput and advanced command operations.

Key Features

  • Core / Architecture  SLC NAND flash memory, ONFI 2.2-compliant, organized as 8G × 8 with a total device size of 64 Gbit (8192 blocks for 64Gb device).
  • Memory Organization  Page size (×8): 8640 bytes (8192 + 448 bytes); block size: 128 pages; plane layout: 2 planes × 2048 blocks per plane.
  • Performance (Array)  Read page: 35 μs (MAX); program page: 350 μs (TYP); erase block: 1.5 ms (TYP).
  • I/O and Timing  Supports synchronous I/O up to timing mode 5 and asynchronous I/O up to timing mode 5; synchronous DDR clock rate example: 10 ns; read/write throughput per pin up to 200 MT/s (synchronous) and 50 MT/s (asynchronous).
  • Interface  Parallel memory interface with DQ and DQS data strobe support for synchronous operation; RESET (FFh) is required as the first command after power-on.
  • Advanced Command Set  Supports program cache, read cache sequential and random, one-time programmable (OTP) mode, multi-plane commands, multi-LUN operations, read unique ID, copyback, and operation-status reporting via the status byte.
  • Reliability & Endurance  Endurance rated at 60,000 program/erase cycles; data retention guidance per JESD47G-compliant qualification reporting.
  • Power & Voltage  Operating VCC range 2.7–3.6 V; VCCQ options include 1.7–1.95 V or 2.7–3.6 V as described in product documentation.
  • Package & Temperature  100-ball VBGA package (12 × 18); commercial operating temperature range 0°C to +70°C (TA).

Typical Applications

  • Embedded storage systems  Provides non-volatile parallel NAND storage for systems that require SLC-level endurance and ONFI-compatible interfaces.
  • Firmware and boot storage  Fast program/read characteristics and advanced command support make the device suitable for storing firmware and system code.
  • Data-logging and industrial equipment  Commercial-temperature-rated designs can use the device where compact VBGA packaging and defined endurance are required.
  • Multi-plane / high-throughput designs  Support for multi-plane and multi-LUN commands enables parallelized operations to increase effective throughput in supported host controllers.

Unique Advantages

  • SLC NAND endurance:  60,000 program/erase cycles provide a quantifiable endurance metric for lifecycle planning.
  • ONFI 2.2 compliance:  Standardized NAND interface and DQS support simplify integration with ONFI-capable controllers.
  • Flexible I/O modes:  Both synchronous (up to timing mode 5) and asynchronous operation allow designers to optimize for throughput or controller compatibility.
  • Advanced command capabilities:  Program/read cache, multi-plane, multi-LUN, OTP and copyback support enable efficient data management and specialized workflows.
  • Compact VBGA package:  100-ball BGA (12 × 18) enables high-density board integration in space-constrained designs.
  • Defined voltage and temperature envelope:  Operating VCC 2.7–3.6 V and commercial temperature range 0°C to 70°C provide clear design constraints for power and thermal planning.

Why Choose MT29F64G08AECABH1-10:A?

The MT29F64G08AECABH1-10:A is positioned as a 64 Gbit SLC NAND flash device that delivers defined endurance, standardized ONFI 2.2 I/O, and a compact 100-ball VBGA footprint. Its mix of synchronous and asynchronous modes, multi-plane support, and advanced command set make it appropriate for designs that need predictable endurance and flexible performance characteristics within the specified voltage and temperature ranges.

This device is suited for engineers specifying non-volatile parallel NAND memory where SLC endurance, documented timing and throughput, and a small BGA package are required. Long-term value comes from clear device-level specifications (endurance, retention guidance, operating envelope) and support for ONFI-compliant host interfaces.

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