MT29F64G08AEAAAC5:A

IC FLASH 64GBIT PARALLEL 52VLGA
Part Description

IC FLASH 64GBIT PARALLEL 52VLGA

Quantity 843 Available (as of May 5, 2026)
Product CategoryMemory
ManufacturerMicron Technology Inc.
Manufacturing StatusObsolete
Manufacturer Standard Lead TimeRFQ
Datasheet

Specifications & Environmental

Device Package52-VLGA (18x14)Memory FormatFLASHTechnologyFLASH - NAND
Memory Size64 GbitAccess TimeN/AGradeCommercial
Clock FrequencyN/AVoltage2.7V ~ 3.6VMemory TypeNon-Volatile
Operating Temperature0°C ~ 70°C (TA)Write Cycle Time Word PageN/APackaging52-VLGA
Mounting MethodNon-VolatileMemory InterfaceParallelMemory Organization8G x 8
Moisture Sensitivity Level3 (168 Hours)RoHS ComplianceROHS3 CompliantREACH ComplianceREACH Unknown
QualificationN/AECCN3A991B1AHTS Code8542.32.0071

Overview of MT29F64G08AEAAAC5:A – IC FLASH 64GBIT PARALLEL 52VLGA

The MT29F64G08AEAAAC5:A is a non-volatile NAND flash memory device providing 64 Gbit of parallel-access storage. It is organized as 8G x 8 and implements parallel FLASH NAND technology in a compact 52‑VLGA (18×14) package.

This device is intended for systems that require high-density, parallel NAND storage with a 2.7 V to 3.6 V supply and a commercial operating temperature range (0°C to 70°C).

Key Features

  • Memory Type Non-volatile FLASH NAND technology for persistent storage.
  • Memory Organization 8G × 8 organization providing a total capacity of 64 Gbit.
  • Interface Parallel memory interface for systems designed to use parallel FLASH devices.
  • Voltage Supply Operates from 2.7 V to 3.6 V to support common system power rails.
  • Package 52‑VLGA (18×14) package offering a compact footprint for board-level integration.
  • Operating Temperature Commercial ambient range of 0°C to 70°C (TA).

Typical Applications

  • Embedded storage systems — Use as non-volatile mass storage in designs that accept a parallel FLASH interface.
  • Firmware and boot code storage — Store bootloaders and firmware images in a parallel NAND FLASH format.
  • High-density parallel memory subsystems — Integrate where 64 Gbit capacity and byte-wide organization are required.

Unique Advantages

  • High-density capacity: 64 Gbit provides substantial non-volatile storage in a single device.
  • Byte-wide memory organization: 8G × 8 arrangement simplifies byte-oriented access for compatible host controllers.
  • Parallel interface compatibility: Supports systems designed for parallel FLASH connectivity without serial conversion.
  • Flexible supply range: 2.7 V to 3.6 V operation aligns with common system power domains.
  • Compact VLGA package: 52‑VLGA (18×14) reduces board area for dense system designs.
  • Commercial temperature rating: Specified for 0°C to 70°C ambient operation for standard electronics environments.

Why Choose IC FLASH 64GBIT PARALLEL 52VLGA?

The MT29F64G08AEAAAC5:A combines a 64 Gbit NAND FLASH architecture with a parallel interface and a compact 52‑VLGA package, making it suitable for designs that require substantial non-volatile storage in a byte-wide format. Its 2.7 V to 3.6 V supply range and commercial temperature rating support integration into a variety of standard electronic systems.

Choose this device when your design needs verified parallel FLASH memory capacity with a known memory organization and package footprint, enabling straightforward board-level integration and predictable system behavior within the specified operating conditions.

Request a quote or contact sales to check pricing, availability, and lead times for MT29F64G08AEAAAC5:A.

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