MT29F64G08AEAAAC5-IT:A
| Part Description |
IC FLASH 64GBIT PARALLEL 52VLGA |
|---|---|
| Quantity | 5 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 52-VLGA (18x14) | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | N/A | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 52-VLGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 8G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F64G08AEAAAC5-IT:A – IC FLASH 64GBIT PARALLEL 52VLGA
The MT29F64G08AEAAAC5-IT:A is a 64 Gbit non-volatile NAND flash memory device with a parallel interface, delivered in a 52-VLGA (18×14) package. It is organized as 8G × 8 and provided in a FLASH memory format for high-density data storage.
The device supports a supply voltage range of 2.7 V to 3.6 V and an operating ambient temperature range of −40°C to 85°C, targeting systems that require high-capacity parallel NAND storage within those electrical and thermal parameters.
Key Features
- Memory Core and Technology
NAND FLASH non-volatile memory with a total capacity of 64 Gbit and an internal organization of 8G × 8. - Interface
Parallel memory interface for integration into parallel bus architectures. - Power
Operates from a 2.7 V to 3.6 V supply range, supporting common system power rails. - Package
Supplied in a 52-VLGA package (18×14) for compact board-level mounting. - Temperature Range
Rated for ambient operation from −40°C to 85°C (TA). - Memory Format
Delivered as FLASH memory with a parallel memory interface and byte-wide organization (8G × 8).
Typical Applications
- Embedded Storage — Non-volatile NAND FLASH for systems requiring on-board high-density storage with a parallel interface.
- Industrial Systems — Storage solutions for equipment operating within −40°C to 85°C ambient temperature limits.
- Legacy/Parallel Designs — Integration into designs that utilize parallel memory interfaces and standard 2.7 V–3.6 V supply rails.
Unique Advantages
- High-density capacity: 64 Gbit of non-volatile storage enables large data retention in a single device.
- Byte-wide organization: 8G × 8 arrangement simplifies byte-oriented system integration.
- Flexible power range: 2.7 V to 3.6 V operation accommodates common system voltages.
- Extended ambient operation: Rated for −40°C to 85°C to support a broad range of thermal environments.
- Compact VLGA package: 52-VLGA (18×14) provides a space-efficient footprint for board-level designs.
- Parallel interface: Supports designs relying on parallel memory access and legacy parallel buses.
Why Choose MT29F64G08AEAAAC5-IT:A?
The MT29F64G08AEAAAC5-IT:A positions itself as a high-density parallel NAND FLASH device that combines 64 Gbit capacity with a byte-wide 8G × 8 organization, a compact 52-VLGA package, and defined electrical and thermal operating ranges. These attributes make it suitable for designs that require substantial on-board non-volatile storage within the specified voltage and temperature limits.
Engineers and procurement teams seeking a parallel-interface FLASH memory solution can evaluate this device where the listed capacity, package, supply voltage (2.7 V–3.6 V), and ambient temperature range (−40°C to 85°C) align with system requirements.
Please request a quote or contact sales to discuss availability and pricing for the MT29F64G08AEAAAC5-IT:A.
