MT29F64G08ABEBBH6-12:B TR
| Part Description |
IC FLASH 64GBIT PARALLEL 152VBGA |
|---|---|
| Quantity | 209 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 152-VBGA (14x18) | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 83 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 152-VBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 8G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F64G08ABEBBH6-12:B TR – 64 Gbit Parallel NAND Flash, 152-VBGA
The MT29F64G08ABEBBH6-12:B TR is a non-volatile FLASH memory device based on NAND technology, organized as 8G × 8 for a total density of 64 Gbit. It provides a parallel memory interface with a specified clock frequency of 83 MHz and operates over a supply voltage range of 2.7 V to 3.6 V.
This device is delivered in a 152-VBGA (14 × 18) package and is specified for operation from 0°C to 70°C (TA), offering high-density, byte-wide storage in a compact BGA footprint for embedded designs requiring NAND flash memory.
Key Features
- Memory Architecture 64 Gbit capacity with an 8G × 8 organization providing byte-wide memory access.
- Technology & Format FLASH - NAND non-volatile memory format for persistent data storage.
- Interface & Timing Parallel memory interface with a clock frequency specified at 83 MHz.
- Power Voltage supply range from 2.7 V to 3.6 V to match a range of system rail options.
- Package 152-VBGA package case (14 × 18) in a ball-grid array footprint.
- Operating Temperature Specified ambient operating range of 0°C to 70°C (TA).
Unique Advantages
- High-density storage: 64 Gbit capacity enables substantial non-volatile data retention in a single device.
- Byte-wide organization: 8G × 8 arrangement supports parallel, byte-oriented memory access.
- Defined timing: 83 MHz clock frequency provides a clear timing reference for system integration.
- Flexible supply range: 2.7 V to 3.6 V operation accommodates a variety of power-rail designs.
- Compact BGA footprint: 152-VBGA (14 × 18) package helps minimize PCB area for space-constrained layouts.
- Commercial temperature range: 0°C to 70°C specification aligns with standard ambient operating environments.
Why Choose MT29F64G08ABEBBH6-12:B TR?
The MT29F64G08ABEBBH6-12:B TR positions itself as a straightforward, high-density parallel NAND flash option, combining a 64 Gbit capacity and 8G × 8 organization with an 83 MHz clock specification and a compact 152-VBGA package. Its 2.7 V to 3.6 V supply range and 0°C to 70°C operating window make it appropriate for designs that require verified electrical and thermal parameters.
This device is suited for designers who need a verified, byte-wide parallel NAND flash memory in a small BGA form factor and who require clear, verifiable specifications for integration, sourcing, and long-term design planning.
Request a quote or submit an enquiry for MT29F64G08ABEBBH6-12:B TR to obtain pricing, availability, and lead-time information.
