MT29F64G08ABCBBH6-6IT:B TR
| Part Description |
IC FLASH 64GBIT PARALLEL 152VBGA |
|---|---|
| Quantity | 1,239 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 152-VBGA (14x18) | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 64 Gbit | Access Time | N/A | Grade | Industrial | ||
| Clock Frequency | 167 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | -40°C ~ 85°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 152-VBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 8G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F64G08ABCBBH6-6IT:B TR – IC FLASH 64GBIT PARALLEL 152VBGA
The MT29F64G08ABCBBH6-6IT:B TR is a 64 Gbit non-volatile NAND flash memory device in a 152-VBGA (14×18) package. It implements FLASH - NAND technology with an 8G × 8 memory organization and a parallel memory interface.
This device is intended for systems requiring high-density parallel NAND storage with a 167 MHz clock frequency, a 2.7 V to 3.6 V supply range, and an operating temperature range of -40°C to 85°C.
Key Features
- Memory (Type & Capacity) 64 Gbit non-volatile NAND flash memory organized as 8G × 8, providing high-density storage in a single device.
- Technology FLASH - NAND architecture for non-volatile data retention.
- Interface Parallel memory interface for direct parallel access to stored data.
- Performance 167 MHz clock frequency to support device timing and data throughput requirements.
- Power Operates from a 2.7 V to 3.6 V supply, accommodating common system voltage rails.
- Package 152-VBGA package (14×18) offering a compact ball-grid array footprint for surface-mount assembly.
- Temperature Range Rated for operation from -40°C to 85°C (TA), suitable for a wide range of ambient conditions.
Unique Advantages
- High-density storage: 64 Gbit capacity in an 8G × 8 organization reduces board-level part count for large storage requirements.
- Parallel interface compatibility: Parallel memory interface enables direct integration into systems designed for parallel FLASH devices.
- Wide supply voltage window: 2.7 V–3.6 V operation supports common 3.3 V and lower-voltage system rails for flexible power design.
- Compact VBGA package: 152-VBGA (14×18) provides a small footprint for space-constrained PCB layouts.
- Broad operating temperature: -40°C to 85°C rating supports deployment across varied ambient environments.
- Proven vendor: Manufactured by Micron Technology Inc., a recognized supplier of memory components.
Why Choose MT29F64G08ABCBBH6-6IT:B TR?
The MT29F64G08ABCBBH6-6IT:B TR delivers high-density, parallel NAND flash storage in a compact 152-VBGA package with a broad operating temperature range and flexible supply voltage. Its 167 MHz clock and 8G × 8 organization make it suitable for designs requiring sizeable non-volatile memory in a surface-mount BGA form factor.
This device is well suited to engineers and procurement teams looking for robust, high-capacity NAND FLASH from Micron Technology Inc., offering straightforward integration into systems that accept parallel flash interfaces and operate within the specified voltage and temperature ranges.
Request a quote or submit a pricing inquiry for the MT29F64G08ABCBBH6-6IT:B TR to obtain availability, lead time, and volume pricing information.
