MT29F512G08EMCBBJ5-10ES:B TR
| Part Description |
IC FLASH 512GBIT PAR 132TBGA |
|---|---|
| Quantity | 231 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 132-TBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND (TLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 100 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | N/A | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 64G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | OBSOLETE | HTS Code | N/A |
Overview of MT29F512G08EMCBBJ5-10ES:B TR – IC FLASH 512GBIT PAR 132TBGA
The MT29F512G08EMCBBJ5-10ES:B TR is a 512 Gbit non-volatile flash memory device implemented in NAND (TLC) technology. It is organized as 64G × 8 and provides a parallel memory interface with a 100 MHz clock frequency.
This device is intended for designs that require high-density parallel flash storage and straightforward voltage integration, operating from 2.7 V to 3.6 V and specified for an ambient temperature range of 0°C to 70°C.
Key Features
- Memory Core 512 Gbit capacity implemented as 64G × 8 using NAND (TLC) flash technology.
- Interface Parallel memory interface with a 100 MHz clock frequency for parallel data access.
- Power Broad supply range of 2.7 V to 3.6 V to support common system voltage rails.
- Package Supplied in a 132-TBGA package (12 × 18 mm) for board-level mounting and high-density layouts.
- Temperature Range Rated for operation from 0°C to 70°C (TA).
Unique Advantages
- High density storage: 512 Gbit capacity reduces the need for multiple devices when large non-volatile storage is required.
- Parallel interface integration: Parallel memory interface and 100 MHz clocking simplify integration into systems that use parallel flash memory buses.
- Flexible supply range: Operates across 2.7 V to 3.6 V, enabling compatibility with a variety of system power architectures.
- Compact TBGA package: 132-TBGA (12 × 18) package supports compact, high-density PCB layouts.
- TLC NAND technology: Utilizes NAND (TLC) flash to provide large storage capacity in a single device footprint.
Why Choose MT29F512G08EMCBBJ5-10ES:B TR?
The MT29F512G08EMCBBJ5-10ES:B TR positions itself as a high-capacity, parallel-interface NAND flash device suitable for designs that require dense non-volatile storage within a compact TBGA footprint. Its voltage range and specified operating temperature make it applicable to systems operating within common commercial conditions.
This device is appropriate for engineers and procurement teams seeking a single-device solution for large parallel flash storage, with straightforward electrical integration and a compact 132-TBGA package for space-constrained designs.
Request a quote or submit an inquiry to obtain pricing and availability for the MT29F512G08EMCBBJ5-10ES:B TR.
