MT29F512G08EEHAFJ4-3R:A TR
| Part Description |
IC FLASH 512GBIT PAR 132VBGA |
|---|---|
| Quantity | 114 Available (as of May 26, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 12 Weeks |
Specifications & Environmental
| Device Package | 132-VBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND (TLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 333 MHz | Voltage | 2.5V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 132-VBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 64G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F512G08EEHAFJ4-3R:A TR – IC FLASH 512GBIT PAR 132VBGA
The MT29F512G08EEHAFJ4-3R:A TR is a 512 Gbit parallel NAND flash memory device featuring Triple-Level Cell (TLC) technology. It provides high-density, non-volatile storage in a 132-VBGA (12×18) package and operates over a 2.5 V to 3.6 V supply range.
Designed for systems that require parallel flash memory, this device offers a 64G × 8 organization and supports a 333 MHz clock frequency, making it suitable for embedded storage subsystems and other applications that accept parallel NAND flash components.
Key Features
- Memory Core 512 Gbit non-volatile NAND flash using TLC (Triple-Level Cell) technology for high-density storage.
- Memory Organization Configured as 64G × 8 to support byte-wide parallel access and straightforward memory mapping.
- Interface & Performance Parallel memory interface with a supported clock frequency of 333 MHz for synchronous operation.
- Power Wide supply range from 2.5 V to 3.6 V to accommodate varying system power rails.
- Package 132-VBGA (12×18) package case providing a compact footprint for board-level integration.
- Operating Temperature Specified operating ambient temperature range of 0°C to 70°C (TA).
Typical Applications
- Embedded storage subsystems — Provides high-density, non-volatile storage for systems that accept parallel NAND flash devices.
- Firmware and code storage — Stores system firmware and code images in a parallel flash memory format.
- Data buffering and local mass storage — Serves as a high-capacity storage element in designs requiring parallel NAND memory.
Unique Advantages
- High storage density: 512 Gbit capacity enables significant on-board non-volatile storage within a single package.
- Parallel interface compatibility: 64G × 8 organization and parallel access suit legacy and existing parallel-NAND architectures.
- Flexible supply range: Operates from 2.5 V to 3.6 V, supporting systems with differing power rails.
- Compact VBGA package: 132-VBGA (12×18) package allows integration in space-constrained board designs.
- Specified operating range: Rated for 0°C to 70°C ambient operation to match commercial temperature system requirements.
- TLC NAND technology: Triple-Level Cell implementation provides greater bit density per die for capacity-focused designs.
Why Choose IC FLASH 512GBIT PAR 132VBGA?
The MT29F512G08EEHAFJ4-3R:A TR positions itself as a high-density, parallel NAND flash memory option offering a balance of capacity and integration-friendly packaging. Its 512 Gbit TLC organization, parallel interface, and 132-VBGA package make it suitable for designs that require substantial non-volatile storage in a compact form factor.
Engineers and procurement teams specifying this device will benefit from its clear electrical and mechanical parameters—64G × 8 organization, 333 MHz clock support, 2.5 V–3.6 V supply range, and 0°C to 70°C operating range—when evaluating fit for embedded storage, firmware retention, or local mass storage applications.
Request a quote or contact sales to discuss availability, pricing, and to submit a purchase inquiry for the MT29F512G08EEHAFJ4-3R:A TR IC FLASH 512GBIT PAR 132VBGA.
