MT29F512G08EECAGJ4-5M:A

The MT29F512G08EECAGJ4-5M:A from Micron Technology Inc. is a 512 Gbit non-volatile FLASH memory device implemented as TLC NAND with a 64G × 8 organization. It provides high-density parallel NAND storage in a 132‑VBGA (12×18) package for integration into space-constrained designs.

Designed for systems that require large-capacity non-volatile memory, the device supports a parallel memory interface with a 200 MHz clock and operates from a 2.7 V to 3.6 V supply, with an ambient operating range of 0°C to 70°C.

Key Features

• Memory Type & Technology Non-volatile FLASH – NAND (TLC) technology providing 512 Gbit capacity in a 64G × 8 organization.
• Interface & Timing Parallel memory interface with a specified clock frequency of 200 MHz for synchronous operation.
• Voltage Supply Operates from 2.7 V to 3.6 V, supporting common system power rails.
• Package 132‑VBGA (12×18) package case suitable for board-level integration where a compact BGA footprint is required.
• Memory Format & Capacity FLASH memory format with a total size of 512 Gbit, organized as 64G × 8.
• Operating Temperature Ambient operating range of 0°C to 70°C (TA) for commercial-temperature applications.

Typical Applications

• High-density embedded storage — Provides large non-volatile capacity for systems that require substantial local data storage in a compact package.
• Consumer and electronic devices — Suited for integration into electronic products needing parallel NAND storage with a BGA footprint and standard voltage rails.
• Data logging and media storage — Enables on-board retention of large datasets where a 512 Gbit FLASH memory and parallel access are advantageous.
• Commercial systems within 0°C–70°C — Intended for designs operating in commercial ambient conditions matching the device’s specified temperature range.

Unique Advantages

• 512 Gbit density: Large storage capacity in a single device reduces the need for multiple memory components.
• Parallel interface with 200 MHz clock: Enables synchronous parallel access patterns suited to designs that use parallel NAND connectivity.
• Compact 132‑VBGA package (12×18): BGA form factor supports board-level space savings and standard assembly processes.
• Flexible supply voltage: 2.7 V to 3.6 V operation aligns with common system power domains.
• TLC NAND technology: Provides multi-level cell density in FLASH NAND format for high-capacity applications.
• Micron manufacturing: Device produced by Micron Technology Inc., providing traceable vendor provenance.

Why Choose IC FLASH 512GBIT PAR 132VBGA?

IC FLASH 512GBIT PAR 132VBGA (MT29F512G08EECAGJ4-5M:A) delivers a high-density, parallel NAND FLASH solution in a compact 132‑VBGA package. Its 512 Gbit capacity, 64G × 8 organization, and 200 MHz parallel interface make it suitable for designs that prioritize onboard storage density and parallel access within commercial temperature ranges.

This device is appropriate for engineers and procurement teams specifying large-capacity non-volatile memory for embedded systems, consumer electronics, and data logging applications where the 2.7 V–3.6 V supply range and 0°C–70°C operating window align with system requirements.

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