MT29F512G08EEHAFJ4-3R:A
| Part Description |
IC FLASH 512GBIT PAR 132VBGA |
|---|---|
| Quantity | 368 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 132-VBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND (TLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 333 MHz | Voltage | 2.5V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 132-VBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 64G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | 3A991B1A | HTS Code | 8542.32.0071 |
Overview of MT29F512G08EEHAFJ4-3R:A – IC FLASH 512GBIT PAR 132VBGA
The MT29F512G08EEHAFJ4-3R:A is a 512 Gbit parallel NAND flash memory device using TLC (triple-level cell) flash technology. It provides non-volatile storage in a 64G × 8 memory organization and a 132-VBGA (12×18) package.
Designed for systems that require high-density parallel flash, this device delivers a defined operating range and power envelope for board-level integration where a parallel memory interface and compact package are required.
Key Features
- Memory Type & Technology Non-volatile NAND flash using TLC technology for high-density storage in a 512 Gbit device.
- Memory Organization & Size Organized as 64G × 8 to provide the specified 512 Gbit capacity.
- Interface & Performance Parallel memory interface with a specified clock frequency of 333 MHz for synchronous operation with parallel controllers.
- Voltage Supply Supported supply range from 2.5 V to 3.6 V to accommodate multiple board-level power domains.
- Package & Mounting Supplied in a 132-VBGA (12×18) package for compact, board-mounted implementations.
- Operating Temperature Rated for 0 °C to 70 °C (TA), indicating suitability for standard commercial temperature environments.
Typical Applications
- Parallel NAND storage systems Provides 512 Gbit parallel NAND flash with a 333 MHz clock for systems that use parallel flash memory interfaces.
- High-density non-volatile modules Appropriate where a 64G × 8 memory organization and 512 Gbit capacity are required for board-level storage subsystems.
- Space-constrained board designs The 132-VBGA (12×18) package supports compact integration on densely populated PCBs.
Unique Advantages
- High storage density: 512 Gbit capacity provides significant non-volatile storage in a single device, reducing the need for multiple ICs.
- Compact package: 132-VBGA (12×18) package enables compact board layouts while retaining parallel connectivity.
- Parallel interface with defined clock: 333 MHz clock support enables integration with parallel memory controllers that require a specified clock rate.
- Flexible supply range: Operates from 2.5 V to 3.6 V to match common board power rails.
- Commercial temperature rating: Rated 0 °C to 70 °C for deployment in standard commercial environments.
Why Choose MT29F512G08EEHAFJ4-3R:A?
The MT29F512G08EEHAFJ4-3R:A is positioned for designs that require a high-capacity, parallel NAND flash solution in a compact BGA package. Its 512 Gbit capacity, 64G × 8 organization, and 132-VBGA footprint make it a focused option for board-level storage implementations requiring a parallel interface and a defined operating envelope.
This device suits customers who need verifiable specifications for capacity, voltage range, clock frequency, and operating temperature, offering straightforward integration where parallel NAND flash is required.
Request a quote or contact the sales team to obtain pricing, lead time, and availability for the MT29F512G08EEHAFJ4-3R:A.
