MT29F64G08ABCBBH6-6:B TR

The MT29F64G08ABCBBH6-6:B TR is a 64 Gbit non-volatile NAND Flash memory device in a 152-VBGA (14×18) package. It is organized as 8G × 8 with a parallel memory interface and operates from a 2.7 V to 3.6 V supply.

Designed for applications that require high-density parallel flash storage, the device offers a 167 MHz clock frequency and an ambient operating range of 0°C to 70°C for standard temperature environments.

Key Features

• Memory Type  Non-volatile NAND Flash memory providing 64 Gbit total capacity, organized as 8G × 8.
• Interface  Parallel memory interface suitable for designs requiring parallel flash connectivity.
• Performance  167 MHz clock frequency specification for timing reference in system integration.
• Power  Wide supply voltage range of 2.7 V to 3.6 V to support common 3 V system rails.
• Package  152-VBGA package (14×18) offering a compact BGA footprint for board-level integration.
• Operating Temperature  Rated for ambient operation from 0°C to 70°C (TA).

Typical Applications

• Embedded Storage Systems  Used as high-density non-volatile storage where parallel flash connectivity is required.
• Consumer Electronics  Integrates into devices operating on 3 V rails that need large-capacity NAND Flash.
• Industrial Control  Suitable for control systems operating within 0°C to 70°C that require persistent program or data storage.

Unique Advantages

• High Density 64 Gbit Capacity:  Supports large data and firmware storage in a single device, reducing component count.
• Parallel Interface:  Enables straightforward integration into existing parallel memory designs without serial conversion.
• 167 MHz Clock Reference:  Provides a defined timing capability for system memory controllers and timing coordination.
• 3 V Supply Compatibility:  Operates across a 2.7 V to 3.6 V range, matching common system power rails for easier power management.
• Compact VBGA Package:  152-VBGA (14×18) package minimizes PCB area while delivering high capacity.

Why Choose MT29F64G08ABCBBH6-6:B TR?

The MT29F64G08ABCBBH6-6:B TR positions itself as a high-density NAND Flash option for designs that require parallel interface memory in a compact VBGA footprint. Its 64 Gbit organization, 167 MHz clock reference, and 2.7 V–3.6 V supply range make it suitable for systems that need substantial non-volatile storage while maintaining compatibility with common 3 V system rails.

This device is appropriate for engineers and procurement teams building embedded storage, consumer electronics, or industrial control systems operating within the specified ambient temperature range and voltage envelope, offering a straightforward integration path with reduced board-level component complexity.

Request a quote or contact sales to obtain pricing, lead-time information, and assistance integrating the MT29F64G08ABCBBH6-6:B TR into your design.