MT29F512G08EMCBBJ5-6:B.001
| Part Description |
IC FLASH 512GBIT PAR 132TBGA |
|---|---|
| Quantity | 872 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 132-TBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND (TLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 167 MHz | Voltage | 2.7V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | N/A | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 64G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | OBSOLETE | HTS Code | N/A |
Overview of MT29F512G08EMCBBJ5-6:B.001 – IC FLASH 512GBIT PAR 132TBGA
The MT29F512G08EMCBBJ5-6:B.001 is a 512 Gbit non-volatile flash memory device based on NAND (TLC) technology with a parallel memory interface. It is organized as 64G × 8 and operates with a clock frequency of 167 MHz.
This device targets designs requiring high-density parallel NAND storage in a compact 132-TBGA (12×18) package, supporting a supply voltage range of 2.7 V to 3.6 V and an operating temperature range of 0°C to 70°C.
Key Features
- Memory Type & Technology Non-volatile FLASH using NAND (TLC) technology for 512 Gbit storage density.
- Memory Organization Organized as 64G × 8 to provide the specified 512 Gbit capacity.
- Interface & Performance Parallel memory interface with a specified clock frequency of 167 MHz.
- Supply Voltage Operates from 2.7 V to 3.6 V to match common system supply rails.
- Package Supplied in a 132-TBGA (12×18) package for board-level integration.
- Operating Temperature Rated for 0°C to 70°C ambient temperature (TA).
Typical Applications
- High-density storage subsystems Use where 512 Gbit non-volatile NAND in a parallel interface is required for large-capacity data storage.
- Embedded memory modules Integration into systems that require 64G × 8 organized FLASH with a 167 MHz clocking capability.
- Compact board-level deployments Designs that need a high-capacity NAND device in a 132-TBGA (12×18) footprint and 2.7 V–3.6 V supply compatibility.
Unique Advantages
- 512 Gbit capacity: Provides substantial non-volatile storage in a single device, based on the listed memory organization.
- TLC NAND technology: Enables higher bit density consistent with the specified FLASH - NAND (TLC) technology.
- Parallel interface at 167 MHz: Supports systems designed for parallel memory access with the specified clock frequency.
- Wide supply voltage range: Operates across 2.7 V to 3.6 V, aligning with common system voltage domains.
- Compact TBGA package: 132-TBGA (12×18) package format facilitates board-level integration where package footprint and thermal characteristics matter.
- Commercial temperature rating: Specified for 0°C to 70°C ambient operation for standard commercial applications.
Why Choose MT29F512G08EMCBBJ5-6:B.001?
The MT29F512G08EMCBBJ5-6:B.001 combines a large 512 Gbit TLC NAND capacity with a parallel interface and a defined 167 MHz clocking capability, packaged in a 132-TBGA (12×18) footprint. Its electrical and environmental specifications—2.7 V to 3.6 V supply and 0°C to 70°C operating range—make it suitable for designs that require high-density non-volatile storage within those system constraints.
This device is appropriate for engineers and procurement teams specifying parallel NAND FLASH where the documented organization, package, voltage, and temperature characteristics are required for system integration and long-term availability considerations.
Request a quote or submit an inquiry to obtain pricing, lead-time, and availability information for the MT29F512G08EMCBBJ5-6:B.001.
