MT29F512G08EBLEEJ4-R:E TR
| Part Description |
IC FLASH 512GBIT PAR 132VBGA |
|---|---|
| Quantity | 1,040 Available (as of May 6, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 6 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | 132-VBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND (TLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | N/A | Voltage | 2.6V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C | Write Cycle Time Word Page | N/A | Packaging | 132-VBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 64G x 8 | ||
| Moisture Sensitivity Level | N/A | RoHS Compliance | Unknown | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | N/A | HTS Code | N/A |
Overview of MT29F512G08EBLEEJ4-R:E TR – IC FLASH 512GBIT PAR 132VBGA
The MT29F512G08EBLEEJ4-R:E TR is a 512 Gbit non-volatile flash memory device using NAND (TLC) technology with a parallel memory interface. It is organized as 64G × 8, providing a single-device 512 Gbit FLASH memory in a compact 132-VBGA (12×18) package.
This device is intended for designs that require a 512 Gbit parallel NAND flash solution, with a specified supply voltage range of 2.6 V to 3.6 V and an operating temperature range of 0°C to 70°C.
Key Features
- Memory Type & Capacity 512 Gbit non-volatile FLASH memory implemented as NAND (TLC) and organized as 64G × 8.
- Technology FLASH - NAND (TLC) architecture as specified for the device.
- Interface Parallel memory interface for integration into parallel-memory system architectures.
- Voltage Supply Supports a supply voltage range of 2.6 V to 3.6 V.
- Package Supplied in a 132-VBGA package (12×18 mm) for compact board-level integration.
- Operating Temperature Specified operating range of 0°C to 70°C.
- Memory Format FLASH memory format with non-volatile storage characteristics.
- Compliance Notes Qualification and RoHS status are not specified in the provided product data.
Unique Advantages
- Large Single-Device Capacity: 512 Gbit in a single 64G × 8 device simplifies high-capacity memory implementations without multiple-die stacking.
- Parallel Interface: Parallel memory interface enables direct attachment to parallel-memory controllers and legacy parallel architectures.
- Compact VBGA Packaging: 132-VBGA (12×18) package provides a compact footprint for board-level integration where space is constrained.
- Wide Supply Range: 2.6 V to 3.6 V supply range allows flexibility across systems that operate within this voltage window.
- Specified Operating Range: Clear operating temperature specification (0°C to 70°C) for designs targeting this temperature window.
- TLC NAND Technology: Uses NAND (TLC) FLASH technology as specified, offering the defined organization and capacity characteristics.
Why Choose MT29F512G08EBLEEJ4-R:E TR?
The MT29F512G08EBLEEJ4-R:E TR positions itself as a high-capacity, single-device parallel NAND FLASH memory option with a clear set of electrical and mechanical specifications. Its 512 Gbit capacity, 64G × 8 organization, and 132-VBGA (12×18) package make it suited to designs that require substantial non-volatile storage in a compact component footprint.
Choose this device when your design requires a 512 Gbit parallel NAND (TLC) flash solution with a defined voltage range (2.6 V–3.6 V) and an operating temperature window of 0°C–70°C. The device specification supports straightforward evaluation of fit for systems matching these parameters.
Request a quote or submit an inquiry to obtain pricing, availability, and additional ordering information for MT29F512G08EBLEEJ4-R:E TR.
