MT29F512G08EBLEEB47R3WC1-M
| Part Description |
IC FLASH 512GBIT DIE |
|---|---|
| Quantity | 402 Available (as of May 6, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Active |
| Manufacturer Standard Lead Time | 8 Weeks |
| Datasheet |
Specifications & Environmental
| Device Package | Die | Memory Format | FLASH | Technology | FLASH - NAND | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Gbit | Access Time | N/A | Grade | N/A | ||
| Clock Frequency | N/A | Voltage | N/A | Memory Type | N/A | ||
| Operating Temperature | N/A | Write Cycle Time Word Page | N/A | Packaging | Die | ||
| Mounting Method | N/A | Memory Interface | N/A | Memory Organization | 64G x 8 | ||
| Moisture Sensitivity Level | N/A | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unaffected | ||
| Qualification | N/A | ECCN | N/A | HTS Code | N/A |
Overview of MT29F512G08EBLEEB47R3WC1-M – 512Gbit NAND Flash Die
The MT29F512G08EBLEEB47R3WC1-M is a 512 Gbit FLASH - NAND memory die from Micron Technology Inc. It is supplied in a bare die package and is organized as 64G × 8.
This die-format NAND flash is intended for integration into designs where high-density flash memory is required and where custom packaging or module-level assembly is performed.
Key Features
- Memory Technology Implements FLASH - NAND memory technology.
- Density 512 Gbit memory capacity for high-density storage integration.
- Memory Organization Organized as 64G × 8 to match standard NAND memory arrangements.
- Package Supplied as a bare die for direct integration into custom packages or multi-die assemblies.
- Manufacturer Manufactured by Micron Technology Inc.
Typical Applications
- Embedded Storage Integration into systems requiring large-capacity NAND flash memory in a die form factor.
- Module Assembly Use in custom-packaged modules or multi-die solutions where bare-die integration is required.
- High-Density Memory Arrays Implementation within designs that consolidate storage through high-capacity NAND devices.
Unique Advantages
- High-density capacity: 512 Gbit reduces the number of memory devices needed for large storage requirements.
- Standard organization: 64G × 8 memory organization aligns with common NAND addressing and design practices.
- Die form factor: Bare die delivery enables tailored packaging, multi-die stacking, or direct system integration.
- Micron manufacturing: Produced by Micron Technology Inc., providing traceability to an established memory manufacturer.
Why Choose MT29F512G08EBLEEB47R3WC1-M?
The MT29F512G08EBLEEB47R3WC1-M positions itself as a high-density NAND flash die for designs that require substantial on-board storage and flexible packaging options. Its 512 Gbit capacity and 64G × 8 organization make it suitable for integration where component count and board space are considerations.
Provided by Micron Technology Inc. in a die format, this device is suited to engineers and manufacturers building custom modules, multi-die assemblies, or other solutions that demand direct die-level integration and high memory density.
Request a quote or contact sales to submit an inquiry for pricing, availability, and integration details for MT29F512G08EBLEEB47R3WC1-M.
