MT29F512G08EBLCEJ4-R:C
| Part Description |
IC FLASH 512GBIT PAR 132VBGA |
|---|---|
| Quantity | 107 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 132-VBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND (TLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | N/A | Voltage | 2.6V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 132-VBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 64G x 8 | ||
| Moisture Sensitivity Level | N/A | RoHS Compliance | Unknown | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | OBSOLETE | HTS Code | 8542.32.0071 |
Overview of MT29F512G08EBLCEJ4-R:C – 512Gbit Parallel NAND Flash (132‑VBGA)
The MT29F512G08EBLCEJ4-R:C is a 512 Gbit non-volatile NAND flash memory device implemented in TLC flash technology. It is organized as 64G × 8 and provides a parallel memory interface in a 132‑VBGA (12 × 18) package.
This device is intended for designs requiring high-density parallel flash storage within a compact BGA footprint and operates from a 2.6 V to 3.6 V supply across an ambient temperature range of 0 °C to 70 °C.
Key Features
- Memory Type Non-volatile NAND flash implemented with TLC technology for high-density storage.
- Memory Capacity & Organization 512 Gbit total capacity, organized as 64G × 8 for byte-wide access.
- Interface Parallel memory interface suitable for systems that require parallel NAND connectivity.
- Voltage Supply Operates from 2.6 V to 3.6 V supply range, compatible with common system power rails.
- Package Supplied in a 132‑VBGA package (12 × 18 mm), enabling compact PCB integration.
- Operating Temperature Rated for ambient operation from 0 °C to 70 °C.
Typical Applications
- Embedded Storage Systems Provides 512 Gbit of parallel NAND flash for embedded designs requiring non-volatile, high-density memory.
- Consumer Electronics Compact 132‑VBGA packaging supports space-constrained consumer devices that integrate parallel flash memory.
- Industrial Equipment (Commercial Temperature Range) Suitable for systems operating within 0 °C to 70 °C that require reliable NAND flash storage at defined supply voltages.
Unique Advantages
- High Density Storage: 512 Gbit capacity provides substantial non-volatile storage in a single device.
- Byte-wide Organization: 64G × 8 organization enables straightforward byte-oriented access in parallel memory architectures.
- Standard Supply Range: 2.6 V to 3.6 V operation aligns with common system power rails for simplified power design.
- Compact BGA Package: 132‑VBGA (12 × 18 mm) package reduces PCB footprint while supporting high-density integration.
- Commercial Temperature Rating: Rated for 0 °C to 70 °C ambient operation for designs targeting commercial temperature environments.
Why Choose MT29F512G08EBLCEJ4-R:C?
The MT29F512G08EBLCEJ4-R:C combines 512 Gbit of TLC NAND flash in a 132‑VBGA package with a parallel interface and a 64G × 8 organization, making it a clear choice for designs that require compact, high-density non-volatile memory. Its 2.6 V to 3.6 V supply range and 0 °C to 70 °C operating window align with common commercial system requirements.
This device is suited for engineers and procurement teams seeking a single-chip parallel flash solution for embedded storage, consumer electronics, and other commercial-temperature applications where package density and standard voltage operation are priorities.
To request a quote or submit an inquiry about MT29F512G08EBLCEJ4-R:C, please contact sales for pricing and availability information.
