MT29F512G08EBHBFJ4-T:B
| Part Description |
IC FLASH 512GBIT PAR 132VBGA |
|---|---|
| Quantity | 36 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 132-VBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND (TLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | N/A | Voltage | 2.5V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 132-VBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 64G x 8 | ||
| Moisture Sensitivity Level | N/A | RoHS Compliance | N/A | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | OBSOLETE | HTS Code | 8542.32.0071 |
Overview of MT29F512G08EBHBFJ4-T:B – IC FLASH 512GBIT PAR 132VBGA
The MT29F512G08EBHBFJ4-T:B is a 512 Gbit non-volatile FLASH memory device using NAND (TLC) technology with a parallel memory interface. It is organized as 64G × 8 and supplied in a 132-VBGA (12×18) package.
This part is intended for designs requiring high-density parallel NAND flash storage with support for a 2.5 V to 3.6 V supply range and an operating ambient temperature range of 0°C to 70°C.
Key Features
- Memory Type Non-volatile FLASH NAND (TLC) memory providing persistent storage without power.
- Capacity & Organization 512 Gbit total capacity, organized as 64G × 8 to support parallel access patterns.
- Interface Parallel memory interface suitable for systems designed to access NAND in parallel mode.
- Voltage Supply Operates across a 2.5 V to 3.6 V supply range for compatibility with a range of system power rails.
- Package 132-VBGA package (12×18 mm) for compact board-level integration where a ball-grid array footprint is required.
- Operating Temperature Specified ambient operating range of 0°C to 70°C (TA) for standard temperature applications.
Typical Applications
- Firmware and Boot Storage Provides non-volatile capacity for storing firmware images and system boot code in designs requiring parallel flash.
- Bulk Data Storage Serves as high-density on-board data storage where 512 Gbit capacity and parallel access are needed.
- Code and Image Storage Suitable for systems that store large codebases or image assets in NAND flash with parallel interface access.
Unique Advantages
- High Capacity: 512 Gbit of storage enables substantial on-board data and code retention within a single device.
- Parallel Access Organization: 64G × 8 organization supports parallel data transfers for architectures designed around parallel NAND.
- Wide Supply Range: 2.5 V to 3.6 V compatibility offers flexibility for integration with different power domains.
- Compact VBGA Package: 132-VBGA (12×18) package provides a compact footprint for board-level assembly using a VBGA form factor.
- Standard Temperature Rating: 0°C to 70°C operating range supports typical ambient operating environments.
Why Choose MT29F512G08EBHBFJ4-T:B?
The MT29F512G08EBHBFJ4-T:B positions itself as a high-density, parallel-interface NAND flash device suitable for designs that require 512 Gbit of non-volatile storage in a compact 132-VBGA package. Its 64G × 8 organization, TLC NAND technology, and 2.5 V–3.6 V supply range provide a clear specification set for integration into systems designed around parallel flash memory.
This device is appropriate for engineers and procurement teams specifying on-board flash for firmware, boot, and bulk data storage in applications that operate within the listed ambient temperature and voltage ranges.
Request a quote or submit an inquiry to obtain pricing, availability, and further ordering information for the MT29F512G08EBHBFJ4-T:B.
