MT29F512G08EBHAFJ4-3T:A TR
| Part Description |
IC FLASH 512GBIT PAR 132VBGA |
|---|---|
| Quantity | 1,478 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 132-VBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND (TLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 333 MHz | Voltage | 2.5V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 132-VBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 64G x 8 | ||
| Moisture Sensitivity Level | 3 (168 Hours) | RoHS Compliance | ROHS3 Compliant | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | OBSOLETE | HTS Code | 8542.32.0071 |
Overview of MT29F512G08EBHAFJ4-3T:A TR – IC FLASH 512GBIT PAR 132VBGA
The MT29F512G08EBHAFJ4-3T:A TR is a 512 Gbit non-volatile FLASH memory device using NAND (TLC) technology with a parallel memory interface. It provides a high-density memory organization (64G × 8) in a compact 132-VBGA package (12x18), targeting designs that require large on-board storage in a small footprint.
Designed for systems operating from a 2.5 V to 3.6 V supply and a 0°C to 70°C ambient temperature range, the device supports a 333 MHz clock frequency to meet timing requirements in parallel-memory applications.
Key Features
- Memory Core 512 Gbit capacity implemented as 64G × 8, using NAND flash (TLC) non-volatile memory.
- Interface Parallel memory interface with a specified clock frequency of 333 MHz for synchronous operation.
- Power Wide operating supply range from 2.5 V to 3.6 V to accommodate common system power rails.
- Package 132-VBGA package, listed as 132-VBGA (12x18), suitable for compact board layouts.
- Memory Format FLASH memory, non-volatile storage for persistent data retention.
- Operating Temperature Specified ambient operating temperature range of 0°C to 70°C (TA).
Unique Advantages
- High density storage: 512 Gbit capacity enables large on-board data and code storage without multiple devices.
- Parallel interface with defined clock: 333 MHz clock frequency supports predictable timing in parallel memory architectures.
- Flexible power support: 2.5 V to 3.6 V supply range allows integration with a variety of system power domains.
- Compact VBGA footprint: 132-VBGA (12x18) package keeps PCB area low while delivering high capacity.
- Non-volatile FLASH format: NAND TLC technology provides persistent storage in a single-device solution.
Why Choose IC FLASH 512GBIT PAR 132VBGA?
This MT29F512G08EBHAFJ4-3T:A TR device is positioned for designs needing large, persistent NAND FLASH capacity in a compact VBGA package, with a parallel interface and a defined 333 MHz clock. Its 2.5 V–3.6 V supply range and 0°C–70°C operating window make it suitable for standard commercial embedded systems.
Choose this part when your design requires a single-device high-density, parallel FLASH solution to simplify board layout and system integration while maintaining clear electrical and thermal operating parameters.
Request a quote or submit an inquiry to obtain pricing and availability for the MT29F512G08EBHAFJ4-3T:A TR.
