MT29F512G08EBHAFJ4-3R:A TR
| Part Description |
IC FLASH 512GBIT PAR 132VBGA |
|---|---|
| Quantity | 952 Available (as of May 5, 2026) |
| Product Category | Memory |
|---|---|
| Manufacturer | Micron Technology Inc. |
| Manufacturing Status | Obsolete |
| Manufacturer Standard Lead Time | RFQ |
| Datasheet |
Specifications & Environmental
| Device Package | 132-VBGA (12x18) | Memory Format | FLASH | Technology | FLASH - NAND (TLC) | ||
|---|---|---|---|---|---|---|---|
| Memory Size | 512 Gbit | Access Time | N/A | Grade | Commercial | ||
| Clock Frequency | 333 MHz | Voltage | 2.5V ~ 3.6V | Memory Type | Non-Volatile | ||
| Operating Temperature | 0°C ~ 70°C (TA) | Write Cycle Time Word Page | N/A | Packaging | 132-VBGA | ||
| Mounting Method | Non-Volatile | Memory Interface | Parallel | Memory Organization | 64G x 8 | ||
| Moisture Sensitivity Level | N/A | RoHS Compliance | Unknown | REACH Compliance | REACH Unknown | ||
| Qualification | N/A | ECCN | OBSOLETE | HTS Code | 8542.32.0071 |
Overview of MT29F512G08EBHAFJ4-3R:A TR – IC FLASH 512GBIT PAR 132VBGA
The MT29F512G08EBHAFJ4-3R:A TR is a 512 Gbit non-volatile NAND FLASH memory device from Micron Technology Inc. It uses TLC NAND architecture and is organized as 64G × 8 with a parallel memory interface.
Designed for systems requiring high-density parallel flash storage, the device offers a 333 MHz clock frequency, a wide supply range of 2.5 V to 3.6 V, and a compact 132-VBGA (12×18) package for space-constrained board designs. Operating temperature is specified at 0°C to 70°C (TA).
Key Features
- Memory Type Non-volatile NAND FLASH (TLC) providing 512 Gbit of storage capacity in a 64G × 8 organization.
- Interface & Performance Parallel memory interface with a 333 MHz clock frequency for parallel access patterns.
- Voltage Range Flexible power operation across a 2.5 V to 3.6 V supply range.
- Package 132-VBGA (12×18) supplier device package suitable for compact board layouts.
- Operating Temperature Specified for 0°C to 70°C (TA) operating conditions.
- Memory Format & Organization FLASH memory format, organized as 64G × 8 to provide the stated 512 Gbit capacity.
Typical Applications
- Embedded Storage — Provides 512 Gbit of non-volatile FLASH for high-density code and data storage in embedded designs.
- Firmware & System Data — Suitable for storing firmware images and system data where parallel flash access and a defined operating range are required.
- Space-Constrained Designs — 132-VBGA (12×18) package supports compact PCB layouts that need large memory capacity.
Unique Advantages
- High Density 512 Gbit Capacity: Delivers substantial non-volatile storage in a single device, reducing the need for multiple memory components.
- Parallel Interface with 333 MHz Clock: Enables parallel access patterns at a defined clock rate to match system timing requirements.
- Wide Supply Voltage: 2.5 V to 3.6 V operation supports varied system power domains and simplifies power rail design.
- Compact VBGA Package: 132-VBGA (12×18) package minimizes board area for high-density storage implementations.
- Defined Operating Range: Specified 0°C to 70°C ambient temperature supports standard commercial temperature applications.
Why Choose IC FLASH 512GBIT PAR 132VBGA?
The MT29F512G08EBHAFJ4-3R:A TR offers a combination of high-density TLC NAND FLASH in a compact 132-VBGA package with a parallel interface and a 333 MHz clock frequency. Its 2.5 V to 3.6 V supply range and defined 0°C to 70°C operating window make it suitable for commercial embedded designs that require substantial non-volatile storage in limited board space.
This device is well suited to designers and procurement teams specifying large-capacity parallel NAND FLASH from Micron Technology Inc. where package size, supply flexibility, and a clear performance point are important design criteria.
Request a quote or submit an inquiry to discuss availability, pricing, and lead times for the MT29F512G08EBHAFJ4-3R:A TR.
