MT29F512G08EBHAFJ4-3ITF:A TR

The MT29F512G08EBHAFJ4-3ITF:A TR is a 512 Gbit non-volatile NAND flash memory device implemented using TLC NAND flash technology. It provides parallel interface access and is offered in a 132-VBGA (12×18) package for board-level integration.

Key technical attributes include a 64G × 8 memory organization, a 333 MHz clock frequency, an operating voltage range of 2.5 V to 3.6 V, and an ambient operating temperature range of −40 °C to 85 °C.

Key Features

• Memory Core 512 Gbit capacity implemented as 64G × 8 using NAND flash (TLC) technology.
• Interface & Performance Parallel memory interface with a 333 MHz clock frequency for synchronous access.
• Power & Voltage Supports a wide supply range from 2.5 V to 3.6 V to accommodate different system power domains.
• Package & Mounting Delivered in a 132‑VBGA (12×18) package suitable for surface-mount board assembly.
• Operating Temperature Rated for ambient operation from −40 °C to 85 °C.
• Memory Organization Organized as 64G × 8 to simplify address and data mapping for parallel system architectures.

Typical Applications

• Embedded storage systems Provides 512 Gbit of non-volatile NAND flash for systems that require large on-board data or code storage with a parallel interface.
• Firmware and system code storage Suitable for storing firmware, boot code, or large static data images where NAND TLC capacity is required.
• Industrial equipment Operation across −40 °C to 85 °C supports deployment in industrial environments with extended temperature requirements.

Unique Advantages

• High-density storage: 512 Gbit capacity reduces the need for multiple devices when high on-board flash capacity is required.
• Parallel interface compatibility: Parallel memory interface and 64G × 8 organization align with systems designed for parallel NAND access.
• Flexible supply range: 2.5 V to 3.6 V operation allows integration with a variety of system power rails.
• Broad operating temperature: −40 °C to 85 °C rating enables use in environments with wide ambient temperature swings.
• Compact BGA package: 132‑VBGA (12×18) package supports high-density PCB designs while providing a board-mountable footprint.

Why Choose MT29F512G08EBHAFJ4-3ITF:A TR?

The MT29F512G08EBHAFJ4-3ITF:A TR delivers a high-capacity, parallel NAND flash option with defined electrical, timing, and thermal characteristics. Its combination of 512 Gbit density, parallel interface, wide supply range, and industrial temperature rating makes it suitable for designs that require significant on-board non-volatile storage in a compact BGA form factor.

This device is well suited to engineers and procurement teams implementing systems that need verifiable flash capacity and operating limits, offering predictable integration based on the provided organization, package, voltage, clock, and temperature specifications.

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